component
KI9435DY
Public Made by Adomby adom
KEXIN MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKI9435DY
KEXIN · MOSFETs · SOP-8
KI9435DY from KEXIN, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel MOSFET, rated for VDS = -30 V with continuous drain current ID = -5.3 A at VGS = -10 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET, rated for VDS = -30 V with continuous drain current ID = -5.3 A at VGS = -10 V. |
| 3 | Source | passive | Source terminal of the P-channel MOSFET, rated for VDS = -30 V with continuous drain current ID = -5.3 A at VGS = -10 V. |
| 4 | Gate | input | Gate terminal; the gate-source voltage must stay within the absolute maximum rating of ±20 V. |
| 5 | Drain | passive | Drain terminal, with drain-source voltage rated at -30 V and pulsed drain current IDM of -20 A. |
| 6 | Drain | passive | Drain terminal, with drain-source voltage rated at -30 V and pulsed drain current IDM of -20 A. |
| 7 | Drain | passive | Drain terminal, with drain-source voltage rated at -30 V and pulsed drain current IDM of -20 A. |
| 8 | Drain | passive | Drain terminal, with drain-source voltage rated at -30 V and pulsed drain current IDM of -20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEXIN |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | -30 | V | ID=-250µA, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS=VGS ID=-250µA | 2 | |
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-24V, VGS=0V | 2 | ||
| On state drain current | ID(ON) | -20 | A | VGS=-10V, VDS=-5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(On) | 58 | mΩ | VGS=-10V, ID=-5.3A | 2 | ||
| Static Drain-Source On-Resistance at TJ=125°C | RDS(On) | 84 | mΩ | VGS=-10V, ID=-5.3A, TJ=125°C | 2 | ||
| Static Drain-Source On-Resistance | RDS(On) | 89 | mΩ | VGS=-4.5V, ID=-4.2A | 2 | ||
| Maximum Body-Diode Continuous Current | IS | -5.3 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | IS=-5.3A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | Ta=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Ta=25°C | 1 | |
| Continuous Drain Current | ID | -5.3 | A | Ta=25°C | 1 | ||
| Pulsed Drain Current | IDM | -20 | A | 1 | |||
| Avalanche Current | IAS | 17 | A | 1 | |||
| Avalanche Energy | EAS | 14 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 2.5 | W | Note.1: mounted on a 1in pad of 2 oz copper | 1 | ||
| Power Dissipation | PD | 1.2 | W | Note.2: mounted on a .04 in pad of 2 oz copper | 1 | ||
| Power Dissipation | PD | 1 | W | Note.3: mounted on a minimum pad | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 50 | °C/W | Note.1: mounted on a 1in pad of 2 oz copper | 1 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 105 | °C/W | Note.2: mounted on a .04 in pad of 2 oz copper | 1 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 125 | °C/W | Note.3: mounted on a minimum pad | 1 | ||
| Thermal Resistance Junction-to-Case | RthJC | 25 | °C/W | 1 | |||
| Forward Transconductance | gFS | 12 | S | VDS=-15V, ID=-5.3A | 2 | ||
| Input Capacitance | Ciss | 690 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 306 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 77 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 14 | 23 | nC | VGS=-15V, VDS=-10V, ID=-5.3A | 2 | |
| Gate Source Charge | Qgs | 2.4 | nC | VGS=-15V, VDS=-10V, ID=-5.3A | 2 | ||
| Gate Drain Charge | Qgd | 4.8 | nC | VGS=-15V, VDS=-10V, ID=-5.3A | 2 | ||
| Turn-On Delay Time | td(on) | 7 | 14 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω | 2 | |
| Turn-On Rise Time | tr | 10 | 18 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω | 2 | |
| Turn-Off Delay Time | td(off) | 19 | 34 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω | 2 | |
| Turn-Off Fall Time | tf | 11 | 20 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω | 2 |
CAD (KiCad official)
- Symbol:
KI9435DY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ki9435dy-etched.step/ki9435dy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ki9435dy.step/ki9435dy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KEXIN datasheet (4 pp, sha256
119c894eb2d0c01e, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).