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Contents

README

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PESD5V0F1BRLDYL

Nexperia · ESD Protection Devices · DFN1006-2

PESD5V0F1BRLDYL from Nexperia, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K1 passive Cathode of diode 1 (bidirectional ESD protection, signal line side), with reverse standoff voltage VRWM up to 5.5 V and ESD protection up to 10 kV contact / 15 kV air.
2 K2 passive Cathode of diode 2 (bidirectional ESD protection, connects to ground in typical use), with reverse standoff voltage VRWM up to 5.5 V and 0.4 pF typical capacitance.

Key specifications

Parameter Value
Manufacturer Nexperia
Package DFN1006-2
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse standoff voltage VRWM 5.5 V Tamb = 25 °C 4
Breakdown voltage VBR 6 8 10 V IR = 1 mA; Tamb = 25 °C 4
Reverse leakage current IRM 1 100 nA VRWM = 5 V; Tamb = 25 °C 4
Diode capacitance Cd 0.4 0.55 pF f = 1 MHz; VR = 0 V; Tamb = 25 °C 4
Clamping voltage VCL 11 V IPP = 1 A; tp = 8/20 μs; Tamb = 25 °C 4
Clamping voltage VCL 15 V IPPM = 2.5 A; tp = 8/20 μs; Tamb = 25 °C 4
Rated peak pulse current IPPM 2.5 A tp = 8/20 µs 3
Junction temperature Tj 125 °C 3
Ambient temperature Tamb -40 125 °C 3
Storage temperature Tstg -55 125 °C 3
Electrostatic discharge voltage, contact VESD 10 kV IEC 61000-4-2; contact discharge 3
Electrostatic discharge voltage, air VESD 15 kV IEC 61000-4-2; air discharge 3
Electrostatic discharge voltage, HBM VESD 10 kV MIL-STD-883; human body model (HBM) 3
Dynamic resistance Rdyn 1.5 Ω IR = 10 A; tp = 100 ns; Tamb = 25 °C 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing pet MIL-STD-883; human body model (HBM) - 10 kV [1] Device stressed with ten non-repetitive current pulses (8/20 µs exponential decay waveform according to IEC 61000-4-5). 3

CAD (KiCad official)

  • Symbol: PESD5V0F1BRLDYL
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2 (KiCad packages3D, STEP)
  • 3D model files: pesd5v0f1brldyl-etched.step / pesd5v0f1brldyl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pesd5v0f1brldyl.step / pesd5v0f1brldyl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 3eaa702a6535101c, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF