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18NM65L-TA3-T
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown18NM65L-TA3-T
UTC Unisonic Tech · MOSFETs · TO-220
18NM65L-TA3-T from UTC Unisonic Tech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 18NM65 N-channel super-junction MOSFET, as assigned in the datasheet pin assignment (G: Gate); the datasheet gives no gate voltage limit for this pin beyond the ±30 V VGSS absolute maximum rating. |
| 2 | D | passive | Drain terminal of the 18NM65 MOSFET, as assigned in the datasheet pin assignment (D: Drain); the datasheet rates the drain-source voltage VDSS at 650 V and continuous drain current ID at 18 A. |
| 3 | S | passive | Source terminal of the 18NM65 MOSFET, as assigned in the datasheet pin assignment (S: Source); the datasheet specifies the source-drain diode forward current IS at 18 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | TC = 25°C | 3 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | TC = 25°C | 3 | |
| Drain Current Continuous | ID | 18 | A | TC = 25°C | 3 | ||
| Pulsed Drain Current | IDM | 36 | A | Note 2 (repetitive rating, pulse width limited by max junction temperature) | 3 | ||
| Avalanche Current | IAR | 2.9 | A | Note 2 | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 151 | mJ | Note 3: L = 10mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C | 3 | ||
| Repetitive Avalanche Energy | EAR | 0.44 | mJ | 3 | |||
| Drain Source Voltage Slope | dv/dt | 12.9 | V/ns | 3 | |||
| Peak Diode Recovery dv/dt | dv/dt | 6 | V/ns | Note 4: ISD≤18A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C | 3 | ||
| Power Dissipation (TO-220) | PD | 104 | W | Package TO-220/TO-262/TO-263 | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Junction to Ambient (TO-220) | θJA | 62.5 | °C/W | Package group TO-220/TO-220F | 3 | ||
| Junction to Case (TO-220) | θJC | 1.2 | °C/W | Package group TO-220/TO-262/TO-263 | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250µA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | µA | VDS=650V, VGS=0V | 4 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±30V | 4 | |
| Gate Threshold Voltage | VGS(TH) | 2.5 | 4.5 | V | VDS=VGS, ID=250µA | 4 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.28 | 0.33 | Ω | VGS=10V, ID=9.0A | 4 | |
| Input Capacitance | CISS | 1115 | pF | VGS=0V, VDS=50V, f=1.0MHz | 4 | ||
| Output Capacitance | COSS | 134 | pF | VGS=0V, VDS=50V, f=1.0MHz | 4 | ||
| Reverse Transfer Capacitance | CRSS | 4.9 | pF | VGS=0V, VDS=50V, f=1.0MHz | 4 | ||
| Gate Resistance | RG | 5 | Ω | f =1MHz, Open Drain | 4 | ||
| Total Gate Charge | QG | 44 | nC | VDS=520V, VGS=10V, ID=18A, IG=1mA (Note 1, 2) | 4 | ||
| Gate Source Charge | QGS | 13 | nC | VDS=520V, VGS=10V, ID=18A, IG=1mA (Note 1, 2) | 4 | ||
| Gate Drain Charge | QGD | 17 | nC | VDS=520V, VGS=10V, ID=18A, IG=1mA (Note 1, 2) | 4 | ||
| Turn-ON Delay Time | tD(ON) | 18 | ns | VDS=100V, VGS=10V, ID=18A, RG=25Ω (Note 1, 2) | 4 | ||
| Turn-ON Rise Time | tR | 25 | ns | VDS=100V, VGS=10V, ID=18A, RG=25Ω (Note 1, 2) | 4 | ||
| Turn-OFF Delay Time | tD(OFF) | 50 | ns | VDS=100V, VGS=10V, ID=18A, RG=25Ω (Note 1, 2) | 4 | ||
| Turn-OFF Fall-Time | tF | 76 | ns | VDS=100V, VGS=10V, ID=18A, RG=25Ω (Note 1, 2) | 4 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 18 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 36 | A | 4 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.5 | V | IF=IS, VGS=0V (Note 1) | 4 | ||
| Reverse Recovery Time | trr | 420 | ns | IS=18A, VGS=0V, dIF/dt=100A/µs | 4 | ||
| Reverse Recovery Charge | Qrr | 7 | µC | 4 |
CAD (KiCad official)
- Symbol:
18NM65L-TA3-T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
18nm65l-ta3-t-etched.step/18nm65l-ta3-t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);18nm65l-ta3-t.step/18nm65l-ta3-t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (9 pp, sha256
a2281bc0a6e6e576, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).