BQ24314DSGT from Texas Instruments, in a WSON-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	IN	power_in	Input power pin connected to the external DC supply; a minimum 1-µF ceramic capacitor is required from this pin to VSS.
2	VSS	power_in	Ground terminal that must be connected to ground at all times.
3	NC	unconnected	Internal test circuit pin; no external connection should be made for normal operation.
4	FAULT	output	Active-low open-drain status output that is driven Low when the input FET is turned off by input overvoltage, input overcurrent, battery overvoltage, or thermal shutdown.
5	CE	input	Active-low chip enable input; when CE is High the input FET is off, and the pin is internally pulled down.
6	VBAT	power_in	Battery voltage sense input, connected to the battery pack positive terminal through a resistor.
7	ILIM	bidirectional	Input overcurrent threshold programming pin; a resistor to VSS sets the overcurrent threshold.
8	OUT	power_out	Output terminal to the charging system; a minimum 1-µF ceramic capacitor is required from this pin to VSS.
9	EP	passive	Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter	Value
Manufacturer	Texas Instruments
Package	WSON-8-EP(2x2)
Category	Power Management (PMIC)
Pins	9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Input voltage	VIN	3.3		26	V		4
Input current, IN pin	IIN			1.5	A		4
Output current, OUT pin	IOUT			1.5	A		4
OCP programming resistor	RILIM	15		90	kΩ		4
Junction temperature	TJ	0		125	°C		4
Input voltage IN with respect to VSS		-0.3		30	V		4
Output voltage OUT with respect to VSS		-0.3		12	V		4
ILIM, FAULT, CE, VBAT with respect to VSS		-0.3		7	V		4
Input current IN				2	A		4
Output current OUT				2	A		4
Output sink current FAULT				15	mA		4
Junction temperature	TJ	-40		150	°C		4
Storage temperature	Tstg	-65		150	°C		4
Undervoltage lockout, input power detected threshold	UVLO	2.6	2.7	2.8	V	CE = Low, VIN increasing from 0 V to 3 V	5
Hysteresis on UVLO	VHYS-UVLO	200	260	300	mV	CE = Low, VIN decreasing from 3 V to 0 V	5
Operating current	IDD		400	600	μA	CE = Low, No load on OUT pin, VIN = 5 V, RILIM = 25 kΩ	5
Standby current	ISTDBY		65	95	μA	CE = High, VIN = 5 V	5
Drop-out voltage IN to OUT	VDO		170	280	mV	CE = Low, VIN = 5 V, IOUT = 1 A	5
Input overvoltage protection threshold (bq24314)	VOVP	5.71	5.85	6	V	CE = Low, VIN increasing from 5 V to 7.5 V	5
Hysteresis on OVP	VHYS-OVP	25	60	110	mV	CE = Low, VIN decreasing from 7.5 V to 5 V	5
Input overcurrent protection threshold range	IOCP	300		1500	mA		5
Input overcurrent protection threshold	IOCP	930	1000	1070	mA	CE = Low, RILIM = 25 kΩ	5
Battery overvoltage protection threshold	BVOVP	4.3	4.35	4.4	V	CE = Low, VIN > 4.4 V	5
Hysteresis on BVOVP	VHYS-BOVP	200	275	320	mV	CE = Low, VIN > 4.4 V	5
Input bias current on VBAT pin	IVBAT			10	nA	DSG Package VBAT = 4.4 V, TJ = 25°C	5
Thermal shutdown temperature	TJ(OFF)	140	150		°C		5
Thermal shutdown hysteresis	TJ(OFF-HYS)		20		°C		5
Low-level input voltage on CE	VIL	0		0.4	V		5
High-level input voltage on CE	VIH	1.4			V		5
Low-level input current on CE	IIL			1	μA	VCE = 0 V	5
High-level input current on CE	IIH			15	μA	VCE = 1.8 V	5
Output low voltage on FAULT	VOL			0.2	V	ISINK = 5 mA	5
Leakage current, FAULT pin HI-Z	IHI-Z			10	μA	VFAULT = 5 V	5
Deglitch time, input power detected status	TDGL(PGOOD)		8		ms	CE = Low. Time measured from VIN 0 V → 5 V, 1-µs rise-time, to output turning ON	6
Input OV propagation delay	tPD(OVP)		1		μs	CE = Low	6
Recovery time from input overvoltage condition	tON(OVP)		8		ms	CE = Low, Time measured from VIN 7.5 V → 5 V, 1-μs fall-time	6
Blanking time, input overcurrent detected	tBLANK(OCP)		176		μs		6
Recovery time from input overcurrent condition	tREC(OCP)		64		ms		6
Deglitch time, battery overvoltage detected	tDGL(BOVP)		176		μs	CE = Low, VIN > 4.4 V. Time measured from VVBAT rising from 4.1 V to 4.4 V to FAULT going low.	6
Junction-to-ambient thermal resistance (DSG)	RθJA		58.6		°C/W		4
Junction-to-case (top) thermal resistance (DSG)	RθJC(top)		67.9		°C/W		4
Junction-to-board thermal resistance (DSG)	RθJB		29.7		°C/W		4
Junction-to-top characterization parameter (DSG)	ψJT		1.2		°C/W		4
Junction-to-board characterization parameter (DSG)	ψJB		30.3		°C/W		4
Junction-to-case (bottom) thermal resistance (DSG)	RθJC(bot)		7.6		°C/W		4

CAD (KiCad official)

Symbol: BQ24314DSGT
Footprint: Package_SON:WSON-8-1EP_2x2mm_P0.5mm_EP0.9x1.6mm
3D model: WSON-8-EP(2x2) (KiCad packages3D, STEP)
3D model files: bq24314dsgt-etched.step / bq24314dsgt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bq24314dsgt.step / bq24314dsgt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Texas Instruments datasheet (32 pp, sha256 875afbe6b2cad826, retrieved 2026-11-05, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

BQ24314DSGT

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3D Model

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