component

IRF8736PBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorirf8736pbffactory-2.0.0extractor-text

Verified IRF8736PBF

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier mfr, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IRF8736PBF · SO-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 10-page datasheet
  • ✓distributor: lcsc C3289651, digikey 2832-IRF8736PBF-ND, mouser 942-IRF8736PBF
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-lg05lv2s/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ irf8736pbf.kicad_sym✓ irf8736pbf.kicad_mod✓ irf8736pbf.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

IRF8736PBF

Infineon Technologies · MOSFETs · SO-8

IRF8736PBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel HEXFET; one of three source pins (1-3) tied together.
2 S passive Source terminal of the N-channel HEXFET; one of three source pins (1-3) tied together.
3 S passive Source terminal of the N-channel HEXFET; one of three source pins (1-3) tied together.
4 G input Gate terminal; gate-to-source voltage max ±20V, threshold 1.35V to 2.35V.
5 D passive Drain terminal; drain-to-source voltage 30V max, one of four drain pins (5-8) tied together.
6 D passive Drain terminal; drain-to-source voltage 30V max, one of four drain pins (5-8) tied together.
7 D passive Drain terminal; drain-to-source voltage 30V max, one of four drain pins (5-8) tied together.
8 D passive Drain terminal; drain-to-source voltage 30V max, one of four drain pins (5-8) tied together.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 3.9 4.8 mΩ VGS = 10V, ID = 18A 2
Static Drain-to-Source On-Resistance RDS(on) 5.5 6.8 mΩ VGS = 4.5V, ID = 14.4A 2
Gate Threshold Voltage VGS(th) 1.35 1.8 2.35 V VDS = VGS, ID = 50µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS = 24V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 150 µA VDS = 24V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 52 S VDS = 15V, ID = 14.4A 2
Total Gate Charge Qg 17 26 nC VDD = 15V, VGS = 4.5V, ID = 14.4A 2
Gate Resistance RG 1.3 2.2 Ω 2
Continuous Source Current (Body Diode) IS 3.1 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed Source Current (Body Diode) ISM 144 A MOSFET symbol showing the integral reverse p-n junction diode 2
Diode Forward Voltage VSD 1 V TJ = 25°C, IS = 14.4A, VGS = 0V 2
Reverse Recovery Time trr 16 24 ns TJ = 25°C, IF = 14.4A, VDD = 10V, di/dt = 300A/µs 2
Reverse Recovery Charge Qrr 19 29 nC TJ = 25°C, IF = 14.4A, VDD = 10V, di/dt = 300A/µs 2
Drain-to-Source Voltage VDS 30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current, VGS @ 10V ID 18 A TA = 25°C 1
Continuous Drain Current, VGS @ 10V ID 14.4 A TA = 70°C 1
Pulsed Drain Current IDM 144 A 1
Power Dissipation PD 2.5 W TA = 25°C 1
Power Dissipation PD 1.6 W TA = 70°C 1
Linear Derating Factor 0.02 W/°C 1
Operating Junction Temperature TJ -55 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Junction-to-Drain Lead Thermal Resistance RθJL 20 °C/W 1
Junction-to-Ambient Thermal Resistance RθJA 50 °C/W 1

CAD (KiCad official)

  • Symbol: IRF8736PBF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf8736pbf-etched.step / irf8736pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf8736pbf.step / irf8736pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 68a343cbde838559, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF