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Contents

README

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MOC217R2M

onsemi · Transistor, Photovoltaic Output Optoisolators · SOP-8

MOC217R2M from onsemi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE passive Anode of the gallium arsenide infrared LED input; continuous forward current is rated 60 mA maximum and reverse voltage 6.0 V.
2 CATHODE passive Cathode of the infrared LED input; connect to the input return.
3 N/C unconnected No internal connection.
4 N/C unconnected No internal connection.
5 EMITTER passive Phototransistor emitter; emitter-collector voltage is rated 7 V maximum.
6 COLLECTOR passive Phototransistor collector; collector-emitter voltage is rated 30 V maximum and continuous collector current 150 mA.
7 BASE passive Phototransistor base, optional connection (a base-emitter resistor RBE can be used to adjust CTR and switching speed).
8 N/C unconnected No internal connection.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOP-8
Category Optoisolators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage Temperature TSTG -40 125 °C 4
Ambient Operating Temperature TA -40 100 °C 4
Junction Temperature TJ -40 125 °C 4
Lead Solder Temperature TSOL 260 °C for 10 seconds 4
Total Device Power Dissipation PD 240 mW @ TA = 25°C 4
Continuous Forward Current (LED) IF 60 mA 4
Forward Current - Peak (LED) IF (pk) 1 A PW = 100 µs, 120 pps 4
Reverse Voltage (LED) VR 6 V 4
LED Power Dissipation PD 90 mW @ TA = 25°C 4
Continuous Collector Current IC 150 mA 4
Collector-Emitter Voltage VCEO 30 V 4
Emitter-Collector Voltage VECO 7 V 4
Detector Power Dissipation PD 150 mW @ TA = 25°C 4
Input Forward Voltage (MOC216M, MOC217M) VF 1.07 1.3 V IF = 1 mA 5
Reverse Leakage Current IR 0.001 100 µA VR = 6 V 5
Collector-Emitter Dark Current ICEO1 1 50 nA VCE = 10 V, TA = 25°C 5
Collector-Emitter Breakdown Voltage (MOC211M, MOC212M, MOC213M, MOC216M, MOC217M) BVCEO 30 100 V IC = 100 µA 5
Collector-Base Breakdown Voltage BVCBO 70 120 V IC = 10 µA 5
Emitter-Collector Breakdown Voltage BVECO 7 10 V IE = 100 µA 5
Collector-Output Current (CTR), MOC217M CTR 100 % IF = 1 mA, VCE = 5 V 5
Collector-Emitter Saturation Voltage (MOC216M, MOC217M) VCE(SAT) 0.4 V IC = 100 µA, IF = 1 mA 5
Input-Output Isolation Voltage VISO 2500 VACRMS t = 1 Minute 6
Maximum Working Insulation Voltage (DIN EN/IEC 60747-5-5) VIORM 565 Vpeak Safety limit, DIN EN/IEC 60747-5-5 3
Highest Allowable Over-Voltage (DIN EN/IEC 60747-5-5) VIOTM 4000 Vpeak Safety limit, DIN EN/IEC 60747-5-5 3
Case Temperature (safety limit) TS 150 °C Safety limit, DIN EN/IEC 60747-5-5 3
Input Current (safety limit) IS,INPUT 200 mA Safety limit, DIN EN/IEC 60747-5-5 3
Output Power (safety limit) PS,OUTPUT 300 mW Safety limit, DIN EN/IEC 60747-5-5 3

CAD (KiCad official)

  • Symbol: MOC217R2M
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: moc217r2m-etched.step / moc217r2m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); moc217r2m.step / moc217r2m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (12 pp, sha256 29d61420022da0d3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF