component

HX8205

Public Made by Adom

by adom

HX hengjiaxing MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorshx8205factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

HX8205

HX hengjiaxing · MOSFETs · SOT-23-6L

HX8205 from HX hengjiaxing, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; VDS rated 20V and continuous drain current 4.0A at TA=25°C.
2 D1/D2 passive Common drain connection of MOSFET 1 and MOSFET 2 (tied to pin 5); VDS rated 20V.
3 S2 passive Source of MOSFET 2; VDS rated 20V and continuous drain current 4.0A at TA=25°C.
4 G2 input Gate of MOSFET 2; gate-source voltage limited to ±12V with threshold 0.45V to 1.2V at 250µA.
5 D1/D2 passive Common drain connection of MOSFET 1 and MOSFET 2 (tied to pin 2); VDS rated 20V.
6 G1 input Gate of MOSFET 1; gate-source voltage limited to ±12V with threshold 0.45V to 1.2V at 250µA.

Key specifications

Parameter Value
Manufacturer HX hengjiaxing
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 20 V VGS=0V, ID=250µA 2
Zero gate voltage drain current IDSS 1 µA VDS=20V, VGS=0V 2
Gate-body leakage IGSS -100 100 nA VDS=0V, VGS=±12V 2
Gate threshold voltage VGS(th) 0.45 0.65 1.2 V VDS=VGS, ID=250µA 2
Drain-source on-state resistance RDS(ON) 22 26 mΩ VGS=4.5V, ID=4.0A 2
Drain-source on-state resistance RDS(ON) 28 35 mΩ VGS=2.5V, ID=3.0A 2
Diode forward voltage VSD 0.76 1.16 V VGS=0V, Is=2A 2
Drain-source voltage VDS 20 V 1
Gate-source voltage VGS -12 12 V 1
Continuous drain current ID 4 A TJ = 150 °C, TA = 25 °C 1
Continuous drain current ID 3 A TA = 70 °C 1
Pulsed drain current IDM 20 A 1
Continuous source current (diode conduction) IS 1.2 A 1
Power dissipation PD 1.4 W TA = 25°C 1
Power dissipation PD 0.9 W TA = 70°C 1
Operating junction and storage temperature range TJ, Tstg -55 150 ℃ 1
Maximum junction-to-ambient RθJA 70 90 ℃/W ≤ 10 s 2
Maximum junction-to-ambient RθJA 100 125 ℃/W Steady-State 2
Maximum junction-to-foot RθJC 63 80 ℃/W Steady-State 2

CAD (KiCad official)

  • Symbol: HX8205
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: hx8205-etched.step / hx8205-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hx8205.step / hx8205.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HX hengjiaxing datasheet (3 pp, sha256 4426c78f046cb78d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF