component
STU417S
Public Made by Adomby adom
MSKSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTU417S
MSKSEMI · MOSFETs · TO-252
STU417S from MSKSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V and a gate threshold of -1.0 to -2.5 V. |
| 2 | D | passive | Drain, which is the middle lead and the exposed tab, rated for VDS of -40 V and continuous ID of -50 A at TC=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET, with body-diode continuous source current of -50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | -50 | A | TC=25℃, VGS @ 10V | 2 | ||
| Continuous Drain Current | ID | -31 | A | TC=100℃, VGS @ 10V | 2 | ||
| Pulsed Drain Current | IDM | -200 | A | 2 | |||
| Total Power Dissipation | PD | 55 | W | TC=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction-ambient | RθJA | 61 | ℃/W | 2 | |||
| Thermal Resistance Junction-Case | RθJC | 2.27 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -40 | V | VGS = 0V, ID = -250µA | 3 | ||
| Gate-body Leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 3 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | TJ=25°C, VDS = -40V, VGS = 0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | μA | TJ=100°C, VDS = -40V, VGS = 0V | 3 | ||
| Gate-Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS = VGS, ID = -250µA | 3 |
| Drain-Source On-Resistance | RDS(on) | 10.5 | 13 | mΩ | VGS = -10V, ID = -16A | 3 | |
| Drain-Source On-Resistance | RDS(on) | 14.2 | 20 | mΩ | VGS = -4.5V, ID = -12A | 3 | |
| Diode Forward Voltage | VSD | -1.2 | V | IS = -1A, VGS = 0V | 3 | ||
| Continuous Source Current | IS | -50 | A | TC=25°C | 3 |
CAD (KiCad official)
- Symbol:
STU417S - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
stu417s-etched.step/stu417s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stu417s.step/stu417s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (8 pp, sha256
618b17e3c6c2865c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).