SI9958DY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S1	passive	Source of MOSFET 1 (N-channel, 30 V rated), shown at pin 1 of the SO-8 top view.
2	G1	input	Gate of MOSFET 1 (N-channel), gate-source voltage limited to ±20 V.
3	S2	passive	Source of MOSFET 2 (P-channel, -30 V rated).
4	G2	input	Gate of MOSFET 2 (P-channel), gate-source voltage limited to ±20 V.
5	D2	passive	Drain of MOSFET 2 (P-channel), tied with pin 6; pulsed drain current up to -40 A.
6	D2	passive	Drain of MOSFET 2 (P-channel), tied with pin 5.
7	D1	passive	Drain of MOSFET 1 (N-channel), tied with pin 8; pulsed drain current up to 40 A.
8	D1	passive	Drain of MOSFET 1 (N-channel), tied with pin 7.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	SO-8
Category	Triode/MOS Tube/Transistor
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage N-Ch	VDS			30	V	TA = 25 °C, N-Channel	1
Drain-Source Voltage P-Ch	VDS			-30	V	TA = 25 °C, P-Channel	1
Gate-Source Voltage N-Ch	VGS	-20		20	V	N-Channel	1
Gate-Source Voltage P-Ch	VGS	-20		20	V	P-Channel	1
Continuous Drain Current N-Ch	ID			8	A	TC = 25 °C, TJ = 150 °C, N-Channel, package limited	1
Continuous Drain Current P-Ch	ID			-8	A	TC = 25 °C, TJ = 150 °C, P-Channel, package limited	1
Continuous Drain Current N-Ch	ID			6.8	A	TC = 70 °C, N-Channel	1
Continuous Drain Current P-Ch	ID			-6.8	A	TC = 70 °C, P-Channel	1
Pulsed Drain Current N-Ch	IDM			40	A	10 µs pulse width, N-Channel	1
Pulsed Drain Current P-Ch	IDM			-40	A	10 µs pulse width, P-Channel	1
Source-Drain Diode Current N-Ch	IS			2.6	A	TC = 25 °C, N-Channel	1
Source-Drain Diode Current P-Ch	IS			-2.6	A	TC = 25 °C, P-Channel	1
Single Pulse Avalanche Current N-Ch	IAS			10	A	L = 0.1 mH, N-Channel	1
Single Pulse Avalanche Current P-Ch	IAS			20	A	L = 0.1 mH, P-Channel	1
Single Pulse Avalanche Energy	EAS			520	mJ	L = 0.1 mH	1
Maximum Power Dissipation N-Ch	PD			3.1	W	TC = 25 °C, N-Channel	1
Maximum Power Dissipation P-Ch	PD			3.2	W	TC = 25 °C, P-Channel	1
Maximum Power Dissipation	PD			2	W	TA = 25 °C, both channels, surface mounted on 1" x 1" FR4, t = 10 s	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Junction-to-Ambient Thermal Resistance N-Ch	RthJA		50	62.5	°C/W	t ≤ 10 s, N-Channel; steady state max 120 °C/W	1
Junction-to-Ambient Thermal Resistance P-Ch	RthJA		47	62.5	°C/W	t ≤ 10 s, P-Channel; steady state max 110 °C/W	1
Junction-to-Foot (Drain) Thermal Resistance N-Ch	RthJF		30	40	°C/W	Steady state, N-Channel	1
Junction-to-Foot (Drain) Thermal Resistance P-Ch	RthJF		29	38	°C/W	Steady state, P-Channel	1
Drain-Source Breakdown Voltage P-Ch	VDS	-30			V	VGS = 0 V, ID = - 250 µA, P-Ch	2
Gate Threshold Voltage N-Ch	VGS(th)	1		2	V	VDS = VGS, ID = 250 µA, N-Ch	2
Gate Threshold Voltage P-Ch	VGS(th)	-1		-2	V	VDS = VGS, ID = - 250 µA, P-Ch	2
Gate-Body Leakage N-Ch	IGSS			100	nA	VDS = 0 V, VGS = ± 12 V, N-Ch	2
Gate-Body Leakage P-Ch	IGSS			100	nA	VDS = 0 V, VGS = ± 12 V, P-Ch	2
Zero Gate Voltage Drain Current N-Ch	IDSS			1	µA	VDS = 30 V, VGS = 0 V, N-Ch	2
Zero Gate Voltage Drain Current P-Ch	IDSS			-1	µA	VDS = - 30 V, VGS = 0 V, P-Ch	2
Zero Gate Voltage Drain Current N-Ch	IDSS			10	µA	VDS = 30 V, VGS = 0 V, TJ = 55 °C, N-Ch	2
Zero Gate Voltage Drain Current P-Ch	IDSS			-10	µA	VDS = - 30 V, VGS = 0 V, TJ = 55 °C, P-Ch	2
On-State Drain Current N-Ch	ID(on)	20			A	VDS = 5 V, VGS = 10 V, N-Ch	2
On-State Drain Current P-Ch	ID(on)	-20			A	VDS = - 5 V, VGS = - 10 V, P-Ch	2
Drain-Source On-State Resistance P-Ch	RDS(on)			0.04	Ω	VGS = - 10 V, ID = - 8 A, P-Ch	2
Drain-Source On-State Resistance N-Ch	RDS(on)			0.02	Ω	VGS = 8 V, ID = 6.7 A, N-Ch	2
Drain-Source On-State Resistance P-Ch	RDS(on)			0.044	Ω	VGS = - 8 V, ID = - 6.5 A, P-Ch	2
Drain-Source On-State Resistance N-Ch	RDS(on)			0.024	Ω	VGS = 4.5 V, ID = 6.6 A, N-Ch	2
Drain-Source On-State Resistance P-Ch	RDS(on)			0.05	Ω	VGS = - 4.5 V, ID = - 5 A, P-Ch	2
Forward Transconductance N-Ch	gfs		27		S	VDS = 15 V, ID = 6.8 A, N-Ch	2
Forward Transconductance P-Ch	gfs		25		S	VDS = - 15 V, ID = - 6.7 A, P-Ch	2
Total Gate Charge P-Ch	Qg		41.5	63	nC	VDS = - 20 V, VGS = - 10 V, ID = - 10 A, P-Ch	2
Gate Resistance P-Ch	Rg	1.2	5.7	9.6	Ω	f = 1 MHz, P-Ch	2
Turn-On Delay Time P-Ch	td(on)		10	16	ns	VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω, P-Ch	3
Rise Time P-Ch	tr		9	15	ns	VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω, P-Ch	3
Turn-Off Delay Time P-Ch	td(off)		23	26	ns	VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω, P-Ch	3
Fall Time P-Ch	tf		10	16	ns	VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω, P-Ch	3
Continuous Source-Drain Diode Current N-Ch	IS			2.6	A	TC = 25 °C, N-Ch	3
Continuous Source-Drain Diode Current P-Ch	IS			-2.6	A	TC = 25 °C, P-Ch	3
Pulse Diode Forward Current P-Ch	ISM			-40	A	P-Ch	3
Body Diode Voltage N-Ch	VSD		0.81	1.2	V	IS = 5.4 A, N-Ch	3
Body Diode Voltage P-Ch	VSD		-0.77	-1.2	V	IS = - 2 A, P-Ch	3
Body Diode Reverse Recovery Time P-Ch	trr		31	57	ns	IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C, P-Ch	3
Body Diode Reverse Recovery Charge P-Ch	Qrr		29	47	nC	IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C, P-Ch	3

CAD (KiCad official)

Symbol: SI9958DY-T1-E3-VB
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SO-8 (KiCad packages3D, STEP)
3D model files: si9958dy-t1-e3-vb-etched.step / si9958dy-t1-e3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si9958dy-t1-e3-vb.step / si9958dy-t1-e3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (14 pp, sha256 dd4f67dc533fd647, retrieved 2026-10-30, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

SI9958DY-T1-E3-VB

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3D Model

Symbol & Footprint

Schematic Symbol

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Datasheet

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