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Contents

README

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STL60P4LLF6-VB

VBsemi Elec · MOSFETs · DFN5x6-8

STL60P4LLF6-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied with pins 2 and 3; pin 1 is marked by a dot on the package.
2 S passive Source of the P-channel MOSFET, tied with pins 1 and 3.
3 S passive Source of the P-channel MOSFET, tied with pins 1 and 2.
4 G input Gate of the P-channel MOSFET; gate-source voltage limit is ±20 V, with RDS(on) specified at VGS = -10 V and -4.5 V.
5 D passive Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; drain-source voltage is -30 V max.
6 D passive Drain of the P-channel MOSFET, tied with pins 5, 7 and 8.
7 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 7.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID -120 A TC = 25 °C, TJ = 150 °C, package limited 1
Continuous Drain Current ID -100 A TC = 70 °C, TJ = 150 °C, package limited 1
Continuous Drain Current ID -31.6 A TA = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID -25.3 A TA = 70 °C, TJ = 150 °C 1
Pulsed Drain Current IDM -280 A 1
Continuous Source-Drain Diode Current IS -80 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -56 A TA = 25 °C 1
Single Pulse Avalanche Current IAS -60 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 160 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 83 W TC = 70 °C 1
Maximum Power Dissipation PD 6.95 W TA = 25 °C 1
Maximum Power Dissipation PD 5 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Peak Temperature 260 °C 1
Junction-to-Ambient Thermal Resistance RthJA 15 20 °C/W t ≤ 10 s 1
Junction-to-Case (Drain) Thermal Resistance RthJC 0.9 1.2 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -30 A VDS = - 5 V, VGS = - 10 V 2
Body Diode Voltage VSD -0.54 -1.1 V IS = - 5 A 2
Continuous Source-Drain Diode Current IS 100 A TC = 25 °C 2
Pulse Diode Forward Current ISM 120 A 2
Body Diode Reverse Recovery Time trr 50 100 ns IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 65 130 nC IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Turn-On Delay Time td(on) 25 40 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 1 Ω 2
Rise Time tr 15 30 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 110 170 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 30 50 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 110 170 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Rise Time tr 100 150 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 100 150 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Fall Time tf 50 75 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Gate Resistance Rg 1.9 Ω f = 1 MHz 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper d. The DFN5x6 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cann 1

CAD (KiCad official)

  • Symbol: STL60P4LLF6-VB
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: stl60p4llf6-vb-etched.step / stl60p4llf6-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stl60p4llf6-vb.step / stl60p4llf6-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 f7dd876a6359faa3, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF