component
CJ3134KW-HAF
Public Made by Adomby adom
Changjing MOSFETs, SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCJ3134KW-HAF
Changjing · MOSFETs · SOT-323-3
CJ3134KW-HAF from Changjing, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal; the datasheet rates gate-source voltage VGS at ±12 V and gives a gate threshold VGS(th) of 0.35 V to 1.1 V at ID = 250 µA. |
| 2 | SOURCE | passive | Source terminal, the reference for VGS; the body diode forward voltage VSD is specified as 1.2 V max at IS = 0.15 A and VGS = 0 V. |
| 3 | DRAIN | passive | Drain terminal; the datasheet rates drain-source voltage VDSS at 20 V and continuous drain current ID at 0.75 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-323-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | 20 | V | 1 | |||
| Gate-Source voltage | VGS | -12 | 12 | V | Printed as ±12 V | 1 | |
| Drain current, continuous | ID | 0.75 | A | 1 | |||
| Drain current, pulsed (note 1) | IDM | 3 | A | Repetitive rating, pulse width limited by max junction temperature | 1 | ||
| Power dissipation (note 2) | PD | 200 | mW | No heat sink, Ta=25℃ (note 2) | 1 | ||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction to ambient | RθJA | 625 | ℃/W | 1 | |||
| Drain-Source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-threshold voltage (note 3) | VGS(th) | 0.35 | 1.1 | V | VDS = VGS, ID = 250µA | 2 | |
| Gate-body leakage current | IGSS | 20 | µA | VDS = 0V, VGS = ±10V | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS = 20V, VGS = 0V | 2 | ||
| Drain-Source on-state resistance (note 3) | RDS(on) | 380 | mΩ | VGS = 4.5V, ID = 650mA | 2 | ||
| Drain-Source on-state resistance (note 3) | RDS(on) | 450 | mΩ | VGS = 2.5V, ID = 550mA | 2 | ||
| Drain-Source on-state resistance (note 3) | RDS(on) | 800 | mΩ | VGS = 1.8V, ID = 450mA | 2 | ||
| Drain-Source diode forward voltage (note 3) | VSD | 1.2 | V | IS = 0.15A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
CJ3134KW-HAF - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323-3 (KiCad packages3D, STEP)
- 3D model files:
cj3134kw-haf-etched.step/cj3134kw-haf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cj3134kw-haf.step/cj3134kw-haf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
9fb51c4273796f96, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).