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Contents

README

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CMD5950-HXY

HXY MOSFET · MOSFETs · TO-252-2L

CMD5950-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±20 V, with operation at gate voltages as low as 4.5 V and a threshold of -1 V min to -2.5 V max at ID=-250 µA.
2 D passive Drain, connected to the exposed tab; drain-source voltage is rated -100 V and continuous drain current is -30 A at TC=25°C.
3 S passive Source; body diode continuous source-drain current is rated -30 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -30 A TC=25℃, VGS @ 10V 1
Pulsed Drain Current IDM -120 A 1
Total Power Dissipation PD 107 W TC=25℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Storage Temperature Range TSTG -55 175 ℃ 1
Avalanche energy EAS 361 mJ Note 2: TJ=25℃, VDD=50V, VG=-10V, Rg=25Ω, L=0.5mH 1
Thermal Resistance Junction-Case RθJC 1.4 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -100 -127 V VGS=0V ID=-250μA 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.8 -2.5 V VDS=VGS, ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 46 57.5 mΩ VGS=-10V, ID=-15A 2
Drain-Source On-State Resistance RDS(ON) 48 63 mΩ VGS=-4.5V, ID=-10A 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-100V, VGS=0V 2
Forward Transconductance gFS 50 S VDS=-5V, ID=-15A 2
Input Capacitance Ciss 8056 pF VDS=-25V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 195 pF VDS=-25V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 70 pF VDS=-25V, VGS=0V, f=1.0MHz 2
Turn-on Delay Time td(on) 13 nS VGS=-10V, VDS=-50V, RL=3.3Ω, RGEN=9.1Ω 2
Turn-on Rise Time tr 64 nS VGS=-10V, VDS=-50V, RL=3.3Ω, RGEN=9.1Ω 2
Turn-Off Delay Time td(off) 36 nS VGS=-10V, VDS=-50V, RL=3.3Ω, RGEN=9.1Ω 2
Turn-Off Fall Time tf 52 nS VGS=-10V, VDS=-50V, RL=3.3Ω, RGEN=9.1Ω 2
Total Gate Charge Qg 147 nC VGS=-10V, VDS=-50V, ID=-10A 2
Gate-Source Charge Qgs 17 nC VGS=-10V, VDS=-50V, ID=-10A 2
Gate-Drain Charge Qgd 31 nC VGS=-10V, VDS=-50V, ID=-10A 2
Source-Drain Current (Body Diode) ISD -30 A 2
Forward on Voltage VSD -1.2 V VGS=0V, IS=-15A 2
Reverse Recovery Time trr 72 ns IF=-15A, di/dt=100A/μs 2
Reverse Recovery Charge Qrr 120 nC IF=-15A, di/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: CMD5950-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: cmd5950-hxy-etched.step / cmd5950-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmd5950-hxy.step / cmd5950-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 6e6bcab2f4654634, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF