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Contents

README

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AGM30P110D

AGM Semi · MOSFETs · TO-252

AGM30P110D from AGM Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V and threshold is -1.2 V min to -2.2 V max at ID=-250µA.
2 D passive Drain (center lead, also the exposed tab); drain-source voltage is -30 V max and continuous drain current is -138 A at Tc=25°C (package limited).
3 S passive Source; body-diode source-drain current is -138 A max.

Key specifications

Parameter Value
Manufacturer AGM Semi
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID -138 A Tc=25℃ (Note 1) 1
Drain Current-Continuous ID -83 A Tc=100℃ 1
Maximum Power Dissipation PD 138 w Tc=25℃ 1
Maximum Power Dissipation PD 55.5 w Tc=100℃ 1
Avalanche energy EAS 529 mJ Note 3: TJ=25℃,VDD=-20V,Vgs=-10V,ID=-46A,L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 0.9 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.2 -1.6 -2.2 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(on) 3.5 4.7 mΩ VGS=-10V, ID=-20A 2
Drain-Source On-State Resistance RDS(on) 5 6.5 mΩ VGS=-4.5V, ID=-15A 2
Source-Drain Current (Body Diode) ISD -138 A 2
Forward on Voltage VSD -0.8 -1.2 V VGS=0V,IS=-20A 2
Forward Transconductance gFS 45 S VDS=-5V,ID=-15A 2
Input Capacitance Ciss 5200 pF VDS=-15V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 1100 pF VDS=-15V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 920 pF VDS=-15V,VGS=0V, F=1MHZ 2
Gate resistance Rg 3.5 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 25 nS VGS=-10V,VDS=-15V, ID=-30A,RGEN=3Ω 2
Turn-on Rise Time tr 35 nS VGS=-10V,VDS=-15V, ID=-30A,RGEN=3Ω 2
Turn-Off Delay Time td(off) 99 nS VGS=-10V,VDS=-15V, ID=-30A,RGEN=3Ω 2
Turn-Off Fall Time tf 50 nS VGS=-10V,VDS=-15V, ID=-30A,RGEN=3Ω 2
Total Gate Charge Qg 150 nC VGS=-10V, VDS=-15V, ID=-30A 2
Gate-Source Charge Qgs 24 nC 2
Gate-Drain Charge Qgd 23 nC 2
Reverse Recovery Time trr 52 ns Isd=-20A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 53 nC 2

CAD (KiCad official)

  • Symbol: AGM30P110D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: agm30p110d-etched.step / agm30p110d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm30p110d.step / agm30p110d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM Semi datasheet (7 pp, sha256 624310b10a7599c6, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF