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Contents

README

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BSS63

Nexperia · Bipolar (BJT) · SOT-23

BSS63 from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the PNP transistor; the datasheet gives a peak base current limit IBM of -100 mA (absolute maximum).
2 E passive Emitter terminal of the PNP transistor; the emitter-base voltage VEBO is limited to -6 V with the collector open.
3 C passive Collector terminal of the PNP transistor; the collector-emitter voltage VCEO is limited to -100 V (open base) and the collector current IC to -100 mA.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage (open emitter) VCBO -110 V open emitter 2
Collector-emitter voltage (open base) VCEO -100 V open base 2
Emitter-base voltage (open collector) VEBO -6 V open collector 2
Collector current IC -100 mA 2
Peak collector current ICM -100 mA 2
Peak base current IBM -100 mA 2
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C; device mounted on FR4 PCB, single-sided copper, tin-plated and standard footprint 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air; device mounted on FR4 PCB, single-sided copper, tin-plated and standard footprint 3
Collector-base cut-off current ICBO -100 nA VCB = -90 V; IE = 0 A; Tamb = 25 °C 4
Collector-base cut-off current ICBO -50 µA VCB = -90 V; IE = 0 A; Tj = 150 °C 4
Emitter-base cut-off current IEBO -100 nA VEB = -6 V; IC = 0 A; Tamb = 25 °C 4
DC current gain hFE 30 VCE = -1 V; IC = -10 mA; Tamb = 25 °C 4
Collector-emitter saturation voltage VCEsat -250 mV 4
Base-emitter saturation voltage VBEsat -900 mV IC = -25 mA; IB = -2.5 mA; Tamb = 25 °C 4
Transition frequency fT 50 85 MHz VCE = -5 V; IC = -25 mA; f = 100 MHz; Tamb = 25 °C 4

CAD (KiCad official)

  • Symbol: BSS63
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bss63-etched.step / bss63-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss63.step / bss63.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 e99877bef57954ea, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF