component
AOE6936
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOE6936
Alpha & Omega Semicon · MOSFETs · DFN-8(5x6)
AOE6936 from Alpha & Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of Q1 (30V, ±20V max VGS), the control MOSFET. |
| 2 | S1/D2 | passive | Common node of the Q1 source and Q2 drain. |
| 3 | D1 | passive | Drain of Q1 (30V max VDS), connected to pin 4 and the D1 bottom pad. |
| 4 | D1 | passive | Drain of Q1 (30V max VDS), connected to pin 3 and the D1 bottom pad. |
| 5 | D2/S1 | passive | Pin labeled D2/S1 in the datasheet, tied with pins 6 and 7. |
| 6 | D2/S1 | passive | Pin labeled D2/S1 in the datasheet, tied with pins 5 and 7. |
| 7 | D2/S1 | passive | Pin labeled D2/S1 in the datasheet, tied with pins 5 and 6. |
| 8 | G2 | input | Gate of Q2 (30V, ±20V max VGS), the low-RDS(ON) MOSFET. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Q1 Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 2 | ||
| Q1 Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Q1 Zero Gate Voltage Drain Current | IDSS | 5 | µA | TJ=55°C | 2 | ||
| Q1 Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Q1 Gate Threshold Voltage | VGS(th) | 1.3 | 1.7 | 2.2 | V | VDS=VGS, ID=250µA | 2 |
| Q1 Static Drain-Source On-Resistance | RDS(ON) | 3.5 | 5 | mΩ | VGS=10V, ID=20A | 2 | |
| Q1 Static Drain-Source On-Resistance | RDS(ON) | 5 | 7 | mΩ | TJ=125°C | 2 | |
| Q1 Static Drain-Source On-Resistance | RDS(ON) | 5.2 | 8 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Q1 Diode Forward Voltage | VSD | 0.7 | 1 | V | IS=1A, VGS=0V | 2 | |
| Q1 Maximum Body-Diode Continuous Current | IS | 30 | A | 2 | |||
| Q1 Gate Resistance | Rg | 0.6 | 1.2 | 2 | Ω | f=1MHz | 2 |
| Q1 Total Gate Charge (10V) | Qg | 16 | 25 | nC | VGS=10V, VDS=15V, ID=20A | 2 | |
| Q1 Total Gate Charge (4.5V) | Qg | 7.5 | 15 | nC | VGS=4.5V, VDS=15V, ID=20A | 2 | |
| Q2 Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 6 | ||
| Q2 Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V | 6 | ||
| Q2 Zero Gate Voltage Drain Current | IDSS | 5 | µA | TJ=55°C | 6 | ||
| Q2 Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 6 | |
| Q2 Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.1 | V | VDS=VGS, ID=250µA | 6 |
| Q2 Static Drain-Source On-Resistance | RDS(ON) | 1.5 | 2 | mΩ | VGS=10V, ID=20A | 6 | |
| Q2 Static Drain-Source On-Resistance | RDS(ON) | 2.3 | 3 | mΩ | TJ=125°C | 6 | |
| Q2 Static Drain-Source On-Resistance | RDS(ON) | 2.6 | 3 | mΩ | VGS=4.5V, ID=20A | 6 | |
| Q2 Diode Forward Voltage | VSD | 0.7 | 1 | V | IS=1A, VGS=0V | 6 | |
| Q2 Maximum Body-Diode Continuous Current | IS | 50 | A | 6 | |||
| Q2 Gate Resistance | Rg | 0.7 | 1.4 | 2.5 | Ω | f=1MHz | 6 |
| Q2 Total Gate Charge (10V) | Qg | 31.5 | 50 | nC | VGS=10V, VDS=15V, ID=20A | 6 | |
| Q2 Total Gate Charge (4.5V) | Qg | 15 | 25 | nC | VGS=4.5V, VDS=15V, ID=20A | 6 | |
| Q1 Maximum Junction-to-Ambient, t≤10s | RθJA | 25 | 35 | °C/W | t ≤ 10s | 1 | |
| Q2 Maximum Junction-to-Ambient, t≤10s | RθJA | 25 | 35 | °C/W | t ≤ 10s | 1 | |
| Q1 Maximum Junction-to-Ambient, Steady-State | RθJA | 50 | 65 | °C/W | Steady-State | 1 | |
| Q2 Maximum Junction-to-Ambient, Steady-State | RθJA | 50 | 65 | °C/W | Steady-State | 1 | |
| Q1 Maximum Junction-to-Case | RθJC | 4 | 5.2 | °C/W | Steady-State | 1 | |
| Q2 Maximum Junction-to-Case | RθJC | 2.4 | 3.2 | °C/W | Steady-State | 1 | |
| Q1 Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Q2 Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage (Q1 and Q2) | VGS | -20 | 20 | V | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
AOE6936 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
aoe6936-etched.step/aoe6936-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aoe6936.step/aoe6936.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (10 pp, sha256
9189e2bd59612ce4, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).