component
IXFH150N15P
Public Made by Adomby adom
Littelfuse/IXYS MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIXFH150N15P
Littelfuse/IXYS · MOSFETs · TO-247
IXFH150N15P from Littelfuse/IXYS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the datasheet rates VGS continuous at ±20 V and VGSM transient at ±30 V. |
| 2 | Drain | passive | Drain terminal; the datasheet rates VDSS at 150 V and ID25 at 150 A at TC = 25° C. |
| 3 | Source | passive | Source terminal; the datasheet gives a continuous source current IS of 150 A and a repetitive ISM of 340 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse/IXYS |
| Package | TO-247 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 150 | V | TJ = 25° C to 175° C | 1 | ||
| Drain-gate voltage | VDGR | 150 | V | TJ = 25° C to 175° C; RGS = 1 MΩ | 1 | ||
| Continuous gate-source voltage | VGS | -20 | 20 | V | Continuous | 1 | |
| Transient gate-source voltage | VGSM | -30 | 30 | V | Transient | 1 | |
| Continuous drain current | ID25 | 150 | A | TC = 25° C | 1 | ||
| RMS drain current, external lead current limit | ID(RMS) | 75 | A | External lead current limit | 1 | ||
| Pulsed drain current | IDM | 340 | A | TC = 25° C, pulse width limited by TJM | 1 | ||
| Avalanche current | IAR | 60 | A | TC = 25° C | 1 | ||
| Avalanche energy, repetitive | EAR | 80 | mJ | TC = 25° C | 1 | ||
| Single pulse avalanche energy | EAS | 2.5 | J | TC = 25° C | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 10 | V/ns | IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 175° C, RG = 4 Ω | 1 | ||
| Total power dissipation | PD | 714 | W | TC = 25° C | 1 | ||
| Operating junction temperature | TJ | -55 | 175 | °C | 1 | ||
| Maximum junction temperature | TJM | 175 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 175 | °C | 1 | ||
| Lead soldering temperature | TL | 300 | °C | 1.6 mm (0.062 in.) from case for 10 s | 1 | ||
| Drain-source breakdown voltage | BVDSS | 150 | V | VGS = 0 V, ID = 250 µA | 1 | ||
| Gate threshold voltage | VGS(th) | 3 | 5 | V | VDS = VGS, ID = 4 mA | 1 | |
| Gate-source leakage current | IGSS | -100 | 100 | nA | VGS = ±20 VDC, VDS = 0 | 1 | |
| Zero gate voltage drain current at 25° C | IDSS | 25 | µA | VDS = VDSS, VGS = 0 V | 1 | ||
| Zero gate voltage drain current at 175° C | IDSS | 1000 | µA | VDS = VDSS, VGS = 0 V, TJ = 175° C | 1 | ||
| Static drain-source on-resistance | RDS(on) | 13 | mΩ | VGS = 10 V, ID = 0.5 ID25; pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % | 1 | ||
| Forward transconductance | gfs | 55 | 80 | S | VDS = 10 V; ID = 0.5 ID25, pulse test | 2 | |
| Input capacitance | Ciss | 5800 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Output capacitance | Coss | 1730 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Reverse transfer capacitance | Crss | 400 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Turn-on delay time | td(on) | 30 | ns | 2 | |||
| Rise time | tr | 33 | ns | VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 | 2 | ||
| Turn-off delay time | td(off) | 100 | ns | RG = 3.3 Ω (External) | 2 | ||
| Fall time | tf | 28 | ns | 2 | |||
| Total gate charge | Qg(on) | 190 | nC | 2 | |||
| Gate-source charge | Qgs | 40 | nC | VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 2 | ||
| Gate-drain charge | Qgd | 105 | nC | VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 2 | ||
| Junction-to-case thermal resistance | RthJC | 0.21 | ° C/W | 2 | |||
| Case-to-sink thermal resistance, TO-247 | RthCS | 0.21 | ° C/W | TO-247 | 2 | ||
| Continuous source current | IS | 150 | A | VGS = 0 V | 2 | ||
| Repetitive pulsed source current | ISM | 340 | A | Repetitive | 2 | ||
| Diode forward voltage | VSD | 1.5 | V | IF = IS, VGS = 0 V, pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % | 2 | ||
| Reverse recovery time | trr | 200 | ns | IF = 25 A, -di/dt = 100 A/µs | 2 | ||
| Reverse recovery charge | QRM | 0.8 | µC | VR = 100 V | 2 |
CAD (KiCad official)
- Symbol:
IXFH150N15P - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
ixfh150n15p-etched.step/ixfh150n15p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixfh150n15p.step/ixfh150n15p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Littelfuse/IXYS datasheet (6 pp, sha256
0da1d37f372ad94f, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).