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ESD5311N-ES
Public Made by Adomby adom
ElecSuper ESD Protection Devices, DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownESD5311N-ES
ElecSuper · ESD Protection Devices · DFN1006-2L
ESD5311N-ES from ElecSuper, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IO | bidirectional | Connect to the protected I/O line; the datasheet rates this line for a 5V working voltage (VRWM), 60W peak pulse power (8/20us), and IEC 61000-4-2 ESD of ±20kV contact and ±20kV air discharge. |
| 2 | GND | power_in | Connect to ground; the I/O-to-GND junction capacitance is specified at 0.5pF typical (0.6pF max) at VR=0V, f=1MHz. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power | Ppk | 60 | W | tp=8/20us @25℃ | 2 | ||
| Peak pulse current | IPP | 4 | A | tp=8/20us @25℃ | 2 | ||
| ESD (IEC61000-4-2 air discharge) | VESD | 20 | kV | IEC61000-4-2 air discharge @25℃ | 2 | ||
| ESD (IEC61000-4-2 contact discharge) | VESD | 20 | kV | IEC61000-4-2 contact discharge @25℃ | 2 | ||
| Junction temperature | TJ | 150 | ℃ | 2 | |||
| Operating temperature | TOP | -40 | 125 | ℃ | 2 | ||
| Storage temperature | TSTG | -55 | 150 | ℃ | 2 | ||
| Lead temperature | TL | 260 | ℃ | 2 | |||
| Reverse Stand-off Voltage | VRWM | 5 | V | 3 | |||
| Reverse Breakdown Voltage | VBR | 6 | V | IT=1mA | 3 | ||
| Reverse Leakage Current | IR | 1 | uA | VRWM=5V | 3 | ||
| Clamping Voltage (1A) | VC | 8 | 9.5 | V | IPP=1A; tp=8/20us | 3 | |
| Clamping Voltage (4A) | VC | 10.5 | 13 | V | IPP=4A; tp=8/20us | 3 | |
| Junction Capacitance | CJ | 0.5 | 0.6 | pF | I/O to GND; VR=0V; f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
ESD5311N-ES - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
esd5311n-es-etched.step/esd5311n-es-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);esd5311n-es.step/esd5311n-es.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ElecSuper datasheet (9 pp, sha256
6954f9cf0c34cc4c, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).