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ZXTD2090E6TA

Public Made by Adom

by adom

Diodes Incorporated Bipolar (BJT), SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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Datasheet

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Contents

README

markdown

ZXTD2090E6TA

Diodes Incorporated · Bipolar (BJT) · SOT-26

ZXTD2090E6TA from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor Q1 (NPN), pin 1 marked by the dot on the top-view pin-out.
2 B1 input Base of transistor Q1; base current IB is rated 200 mA maximum and VEBO is 7 V.
3 C2 passive Collector of transistor Q2; VCEO is 50 V, continuous IC is 1 A and peak pulse ICM is 2 A.
4 E2 passive Emitter of transistor Q2 (NPN).
5 B2 input Base of transistor Q2; base current IB is rated 200 mA maximum and VEBO is 7 V.
6 C1 passive Collector of transistor Q1; VCEO is 50 V, continuous IC is 1 A and peak pulse ICM is 2 A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-26
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 50 V @TA = +25°C 2
Collector-Emitter Voltage VCEO 50 V @TA = +25°C 2
Emitter-Base Voltage VEBO 7 V @TA = +25°C 2
Continuous Collector Current IC 1 A @TA = +25°C 2
Peak Pulse Current ICM 2 A @TA = +25°C 2
Base Current IB 200 mA @TA = +25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Collector-Base Breakdown Voltage BVCBO 50 V IC = 100µA 4
Collector-Emitter Breakdown Voltage BVCEO 50 V IC = 10mA 4
Emitter-Base Breakdown Voltage BVEBO 7 V IE = 100µA 4
Collector-Base Cut-Off Current ICBO 10 nA VCB = 40V 4
Collector-Emitter Cut-Off Current ICES 10 nA VCES = 40V 4
Emitter Cut-Off Current IEBO 10 nA VEB = 5.6V 4
DC Current Gain (min) hFE 200 IC = 10mA, VCE = 2V 4
DC Current Gain (min) hFE 300 IC = 100mA, VCE = 2V 4
DC Current Gain (min) hFE 75 IC = 1A, VCE = 2V 4
DC Current Gain (min) hFE 20 IC = 1.5A, VCE = 2V 4
DC Current Gain (max) hFE 420 IC = 10mA, VCE = 2V 4
DC Current Gain (max) hFE 450 IC = 100mA, VCE = 2V 4
DC Current Gain (max) hFE 350 IC = 500mA, VCE = 2V 4
DC Current Gain (max) hFE 130 IC = 1A, VCE = 2V 4
DC Current Gain (max) hFE 60 IC = 1.5A, VCE = 2V 4
Collector-Emitter Saturation Voltage (min) VCE(sat) 24 mV IC = 100mA, IB = 10mA 4
Collector-Emitter Saturation Voltage (min) VCE(sat) 60 mV IC = 250mA, IB = 10mA 4
Collector-Emitter Saturation Voltage (min) VCE(sat) 120 mV IC = 500mA, IB = 10mA 4
Collector-Emitter Saturation Voltage (min) VCE(sat) 160 mV IC = 1A, IB = 50mA 4
Collector-Emitter Saturation Voltage (max) VCE(sat) 35 mV IC = 100mA, IB = 10mA 4
Collector-Emitter Saturation Voltage (max) VCE(sat) 80 mV IC = 250mA, IB = 10mA 4
Collector-Emitter Saturation Voltage (max) VCE(sat) 200 mV IC = 500mA, IB = 10mA 4
Collector-Emitter Saturation Voltage (max) VCE(sat) 270 mV IC = 1A, IB = 50mA 4
Base-Emitter Saturation Voltage VBE(sat) 940 1100 mV IC = 1A, IB = 50mA 4
Base-Emitter Turn-On Voltage VBE(on) 850 1100 mV IC = 1A, VCE = 2V 4
Thermal Resistance, Junction to Ambient RJA 179 °C/W Notes 5 & 9 2
Thermal Resistance, Junction to Ambient RJA 139 °C/W Notes 6 & 9 2
Thermal Resistance, Junction to Ambient RJA 113 °C/W Notes 6 & 10 2
Thermal Resistance, Junction to Ambient RJA 73 °C/W Notes 8 & 9 2
Thermal Resistance, Junction to Lead RJL 95.5 °C/W Note 11 2
Power Dissipation PD 0.7 W Notes 5 & 9 2
Power Dissipation PD 0.9 W Notes 6 & 9 2
Power Dissipation PD 1.1 W Notes 6 & 10 2
Power Dissipation PD 1.7 W Notes 8 & 9 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: ZXTD2090E6TA
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-26 (KiCad packages3D, STEP)
  • 3D model files: zxtd2090e6ta-etched.step / zxtd2090e6ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtd2090e6ta.step / zxtd2090e6ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 43245e29cb3c1867, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF