Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

IRFB3607PBF-ES

ElecSuper · MOSFETs · TO-220AB

IRFB3607PBF-ES from ElecSuper, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control terminal of the N-channel MOSFET; the datasheet rates the gate-source voltage VGS at ±20 V.
2 Drain passive Drain terminal of the MOSFET; the datasheet rates the drain-source voltage BVDSS at 68 V and the continuous drain current ID at 80 A at TC=25°C.
3 Source passive Source terminal of the MOSFET, the reference for the gate-source voltage; the datasheet gives no separate limit for this pin.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS 68 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 80 A TC=25°C 2
Continuous Drain Current ID 52 A TC=75°C 2
Maximum Power Dissipation PD 147 W 2
Pulsed Drain Current IDM 320 A 2
Avalanche Current, Single Pulsed IAS 22 A Note a: Tj=25℃, VDD=35V, VG=10V, L=0.5mH, Rg=25Ω 2
Avalanche Energy, Single Pulsed EAS 121 mJ Note a: Tj=25℃, VDD=35V, VG=10V, L=0.5mH, Rg=25Ω 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Drain-to-Source Breakdown Voltage BVDSS 68 V VGS=0V, ID=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=68V, VGS=0V 3
Gate-to-source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(TH) 2 2.9 4 V VGS=VDS, ID=250uA 3
Drain-to-source On-resistance RDS(on) 6.6 8.6 mΩ VGS=10V, ID=30A 3
Forward transconductance gfs 150 S VDS=5V, ID=30A 3
Input Capacitance CISS 4065 pF VGS=0V, f=1MHz, VDS=25V 3
Output Capacitance COSS 266 pF VGS=0V, f=1MHz, VDS=25V 3
Reverse Transfer Capacitance CRSS 230 pF VGS=0V, f=1MHz, VDS=25V 3
Total Gate Charge QG(TOT) 35 nC VGS=10V, VDS=30V, ID=20A 3
Gate-to-Source Charge QGS 11 nC VGS=10V, VDS=30V, ID=20A 3
Gate-to-Drain Charge QGD 9 nC VGS=10V, VDS=30V, ID=20A 3
Turn-On Delay Time td(ON) 15 ns VGS=10V, VDS=30V, ID=20A, RG=3Ω 3
Rise Time tr 95 ns VGS=10V, VDS=30V, ID=20A, RG=3Ω 3
Turn-Off Delay Time td(OFF) 48 ns VGS=10V, VDS=30V, ID=20A, RG=3Ω 3
Fall Time tf 33 ns VGS=10V, VDS=30V, ID=20A, RG=3Ω 3
Forward Voltage VSD 1.5 V VGS=0V, IS=30A 3
Junction-to-Case Thermal Resistance RθJC 0.85 °C/W Single Operation 2

CAD (KiCad official)

  • Symbol: IRFB3607PBF-ES
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb3607pbf-es-etched.step / irfb3607pbf-es-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb3607pbf-es.step / irfb3607pbf-es.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (8 pp, sha256 8c87c12a4e22722b, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF