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Contents

README

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ASA65R120EFD

ANHI · MOSFETs · TO-220F

ASA65R120EFD from ANHI, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; enhancement-mode threshold Vth = 3 to 5 V, VGS static limit ±20 V (±30 V dynamic).
2 D passive Drain; 650 V minimum breakdown (V(BR)DSS), 30 A continuous drain current and 90 A pulsed at TC=25°C.
3 S passive Source; connects to the body diode anode and the power return of the switch.

Key specifications

Parameter Value
Manufacturer ANHI
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage (Tj,max) VDS 700 V @ Tj,max 1
Continuous drain current ID 30 A TC=25°C 2
Pulsed drain current ID,pulse 90 A TC=25°C 2
Avalanche energy, single pulse EAS 1216 mJ Tc=25℃,VDD=50V, L=10mH, RG=25Ω 2
Avalanche current, single pulse IAR 10.9 A Tc=25℃,VDD=50V,L=10mH, RG=25Ω 2
MOSFET dv/dt ruggedness dv/dt 36.2 V/ns VDS=0...400V 2
Gate source voltage (static) VGS -20 20 V static; 2
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 2
Power dissipation (TO220F) Ptot 36.5 W TC=25°C 2
Storage temperature Tstg -55 150 °C 2
Operating junction temperature Tj -55 150 °C 2
Soldering temperature TL 260 °C Distance of 1.6mm from case for 10s 2
Reverse diode dv/dt dv/dt 50 V/ns VDS=0...400V, ISD<= ID, Tj=25°C 2
Thermal resistance, junction - case (TO220F) RthJC 3.4 °C/W 3
Thermal resistance, junction - ambient (TO220F) RthJA 62 °C/W device on PCB, minimal footprint 3
Drain-source breakdown voltage V(BR)DSS 655 V VGS=0V, ID=250uA 4
Gate threshold voltage V(GS)th 3 5 V VDS=VGS, ID=250uA 4
Zero gate voltage drain current IDSS 2 uA VDS=650V, VGS=0V, Tj=25°C 4
Gate-source leakage current IGSS 100 nA VGS=30V, VDS=0V 4
Drain-source on-state resistance RDS(on) 0.105 0.12 Ω VGS=10V, ID=14A, Tj=25°C 4

CAD (KiCad official)

  • Symbol: ASA65R120EFD
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ANHI datasheet (13 pp, sha256 82a436c096d3e763, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF