component

NSVMMBT5550LT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsnsvmmbt5550lt1g
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Datasheet

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Contents

README

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NSVMMBT5550LT1G

onsemi · Bipolar (BJT) · SOT-23

NSVMMBT5550LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor. Control terminal; forward-bias base-emitter junction to turn the device on. VEBO breakdown = 6.0 V; VBE(sat) up to 1.0 V at IC = 10 mA / IB = 1 mA.
2 E passive Emitter of the NPN transistor. Reference terminal for base drive; current path for IC + IB back to circuit common.
3 C passive Collector of the NPN transistor. High-voltage terminal; VCEO = 140 V, VCBO = 160 V, IC(continuous) = 600 mA. VCE(sat) up to 0.15 V at IC = 10 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • NSVMMBT5550LT1G
  • NSVMMBT5550LT3G

CAD (KiCad official)

  • Symbol: NSVMMBT5550LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nsvmmbt5550lt1g-etched.step / nsvmmbt5550lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsvmmbt5550lt1g.step / nsvmmbt5550lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 5a38028358b44677, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF