component
SI4162DY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSI4162DY-T1-GE3
Vishay Intertech · MOSFETs · SO-8
SI4162DY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, rated for a drain-source voltage of 30 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, rated for a drain-source voltage of 30 V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, rated for a drain-source voltage of 30 V. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±20 V per the absolute maximum ratings. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 30 V. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 30 V. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 30 V. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 19.3 | A | TJ = 150 °C; TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 15.4 | A | TJ = 150 °C; TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | 13.6 | A | TA = 25 °C (notes b, c) | 1 | ||
| Continuous Drain Current | ID | 10.9 | A | TA = 70 °C (notes b, c) | 1 | ||
| Pulsed Drain Current | IDM | 70 | A | 1 | |||
| Avalanche Current | IAS | 31 | A | L = 0.1 mH | 1 | ||
| Avalanche Energy | EAS | 48 | mJ | 1 | |||
| Continuous Source-Drain Diode Current | IS | 4.2 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 2.1 | A | TA = 25 °C (notes b, c) | 1 | ||
| Maximum Power Dissipation | PD | 5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.2 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TA = 25 °C (notes b, c) | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TA = 70 °C (notes b, c) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 38 | 50 | °C/W | t ≤ 10 s (notes b, d) | 1 | |
| Maximum Junction-to-Ambient, steady state | RthJA | 85 | °C/W | Steady State (note d) | 1 | ||
| Maximum Junction-to-Case (Drain) | RthJC | 20 | 25 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 50 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.0065 | 0.0079 | Ω | VGS = 10 V, ID = 20 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.0082 | 0.01 | Ω | VGS = 4.5 V, ID = 14 A | 2 | |
| Total Gate Charge | Qg | 20 | 30 | nC | VDS = 15 V, VGS = 10 V, ID = 20 A | 2 | |
| Total Gate Charge | Qg | 8.8 | 14 | nC | VDS = 15 V, VGS = 4.5 V, ID = 20 A | 2 | |
| Gate Resistance | Rg | 1 | 2 | Ω | f = 1 MHz | 2 | |
| Turn-On Delay Time | td(on) | 20 | 30 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 17 Ω | 2 | |
| Rise Time | tr | 15 | 25 | ns | 2 | ||
| Turn-Off Delay Time | td(off) | 25 | 40 | ns | 2 | ||
| Fall Time | tf | 10 | 15 | ns | 2 | ||
| Turn-On Delay Time | td(on) | 14 | 20 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1.0 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 9 | 15 | ns | 2 | ||
| Fall Time | tf | 9 | 15 | ns | 2 | ||
| Continuous Source-Drain Diode Current | IS | 30 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 70 | A | 2 | |||
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 4.0 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 21 | 42 | ns | IF = 4.0 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 15 | 30 | nC | 2 |
CAD (KiCad official)
- Symbol:
SI4162DY-T1-GE3 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4162dy-t1-ge3-etched.step/si4162dy-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4162dy-t1-ge3.step/si4162dy-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
c31497d5454b83ab, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).