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Contents

README

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BT169EL-B-T92-B

UTC(Unisonic Tech) · TRIACs · TO-92-2.54mm

BT169EL-B-T92-B from UTC(Unisonic Tech), in a TO-92-2.54mm. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode main terminal of the BT169E SCR, rated for repetitive peak off-state voltages VDRM/VRRM of 500 V on the BT169E.
2 G input Gate terminal, with peak gate voltage VGM 5 V, peak reverse gate voltage VRGM 5 V, peak gate current IGM 1 A, peak gate power PGM 2 W and average gate power PG(AV) 0.1 W (over any 20 ms period).
3 A passive Anode main terminal of the BT169E SCR, which carries the on-state current (IT(AV) 0.5 A, IT(RMS) 0.8 A) and blocks up to 500 V VDRM/VRRM.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package TO-92-2.54mm
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Off-State Voltage (BT169E) VDRM,VRRM 500 V 3
Peak Gate Voltage VGM 5 V 3
Peak Reverse Gate Voltage VRGM 5 V 3
Peak Gate Current IGM 1 A 3
Average On-State Current IT(AV) 0.5 A Half Sine Wave, TLEAD≦83C 3
RMS On-State Current IT(RMS) 0.8 A All Conduction Angles 3
Non-Repetitive Peak On-State Current ITSM 8 A t=10ms, Half Sine Wave, TJ=25C Prior to Surge 3
Non-Repetitive Peak On-State Current ITSM 9 A t=8.3ms, Half Sine Wave, TJ=25C Prior to Surge 3
I2t For Fusing I2t 0.32 A2s t=10ms 3
Repetitive Rate of Rise of On-State Current After Triggering dIT/dt 50 A/μs ITM=2A,IG=10mA, dIG/dt=100mA/s 3
Peak Gate Power PGM 2 W 3
Average Gate Power PG(AV) 0.1 W Over any 20 ms period 3
Junction Temperature TJ 125 C 3
Storage Temperature TSTG -40 150 C 3
Thermal Resistance Junction to Ambient (TO-92) θJA 180 C/W pcb mounted, lead length=4mm 3
Gate Trigger Current IGT 25 200 μA VD=12V, IT=10 mA, gate open circuit 4
Gate Trigger Current, classification rank B range IGT 48 105 μA 4
Latching Current IL 2 6 mA VD=12V, IGT=0.5mA, RGK=1k 4
Holding Current IH 2 5 mA VD=12V,IGT=0.5mA, RGK=1k 4
On-State Voltage VT 1.2 1.35 V IT=1A 4
Gate Trigger Voltage VGT 0.3 0.8 V VD=12V, IT=10mA, gate open circuit 4
Gate Trigger Voltage VGT 0.2 0.5 V VD=VDRM(MAX), IT=10mA, TJ=125C, gate open circuit 4
Off-State Leakage Current ID,IR 0.05 0.1 mA VD=VDRM(MAX), VR=VRRM(MAX), TJ=125C, RGK=1k 4
Critical Rate of Rise of Off-State Voltage dVD/dt 500 800 V/μs VDM=67% VDRM(MAX), TJ=125C, exponential waveform, RGK=1k 4
Gate Controlled Turn-On Time tgt 2 μs ITM=2A,VD=VDRM(MAX), IG=10mA, dIG/dt=0.1A/s 4
Circuit Commutated Turn-Off Time tq 100 μs VD=67% VDRM(MAX), TJ=125C, ITM=1.6A,VR=35V, dITM/dt=30A/s, VD/dt=2V/s, RGK=1k 4

CAD (KiCad official)

  • Symbol: BT169EL-B-T92-B
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-2.54mm (KiCad packages3D, STEP)
  • 3D model files: bt169el-b-t92-b-etched.step / bt169el-b-t92-b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bt169el-b-t92-b.step / bt169el-b-t92-b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (7 pp, sha256 fa9fae6cb20c7894, retrieved 2026-10-29, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF