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MMBT5551Q

Public Made by Adom

by adom

Yangzhou Yangjie Elec Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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MMBT5551Q

Yangzhou Yangjie Elec Tech · Bipolar (BJT) · SOT-23

MMBT5551Q from Yangzhou Yangjie Elec Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; the datasheet gives no base-specific limit apart from VEBO of 6.0 V maximum emitter-base voltage.
2 E passive Emitter of the NPN transistor; VEBO is 6.0 V maximum emitter-base voltage and Tj is 150 °C maximum.
3 C passive Collector of the NPN transistor; VCBO is 180 V, VCEO is 160 V and continuous collector current is 600 mA maximum.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 180 V IC=100μ A,IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 160 V IC=1.0mA,IB=0 2
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10μ A,IC=0 2
Collector cut-off current ICBO 50 nA VCB=120V, IE=0 2
Emitter cut-off current IEBO 50 nA VEB=4.0V, IC=0 2
DC current gain hFE 80 VCE=5.0V,IC=1.0mA 2
DC current gain hFE 100 300 VCE=5.0V,IC=10mA 2
DC current gain hFE 50 VCE=5.0V,IC=50mA 2
Collector-emitter saturation voltage VCE(sat) 0.2 V IC=50mA,IB=5.0mA 2
Base-emitter saturation voltage VBE(sat) 1 V IC=50mA,IB=5.0mA 2
Transition frequency fT 100 300 MHz VCE=5.0Vdc,IC=10mA,f=30MHz 2
Collector-Base Voltage VCBO 180 V 1
Collector-Emitter Voltage VCEO 160 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current -Continuous IC 600 mA 1
Total Device Dissipation PD 300 mW (*) Device mounted on FR-4 PCB 1.0 x 1.0 x 0.06 inch 1
Thermal Resistance From Junction To Ambient RθJA 417 ℃/W (*) Device mounted on FR-4 PCB 1.0 x 1.0 x 0.06 inch 1
Maximum Junction Temperature Tj 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 1

CAD (KiCad official)

  • Symbol: MMBT5551Q
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt5551q-etched.step / mmbt5551q-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5551q.step / mmbt5551q.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (5 pp, sha256 35e13686bcd993bf, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF