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NCE3050K
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE3050K
Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L
NCE3050K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±20 V absolute maximum and RDS(ON) specified at VGS=10V and 5V. |
| 2 | D | passive | Drain, the shortened centre lead which is common with the exposed drain tab; VDS rated 30 V and continuous ID 50 A. |
| 3 | S | passive | Source; carries the 50 A continuous drain current return and the body diode (IS 40 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 50 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | 35 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 140 | A | 1 | |||
| Maximum Power Dissipation | PD | 60 | W | 1 | |||
| Single pulse avalanche energy | EAS | 70 | mJ | Note 5: Tj=25℃, VDD=15V, VG=10V, L=1mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.5 | ℃/W | Note 2 | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | 33 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 3 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 8 | 11 | mΩ | VGS=10V, ID=25A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 10 | 16 | mΩ | VGS=5V, ID=20A | 2 | |
| Forward Transconductance | gFS | 15 | S | VDS=5V,ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 0.85 | 1.2 | V | VGS=0V,IS=25A | 2 | |
| Diode Forward Current | IS | 40 | A | Note 2 | 2 | ||
| Reverse Recovery Time | trr | 22 | 35 | nS | 2 | ||
| Reverse Recovery Charge | Qrr | 12 | 20 | nC | TJ = 25°C, IF = 40A, di/dt = 100A/μs (Note 3) | 2 |
CAD (KiCad official)
- Symbol:
NCE3050K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
nce3050k-etched.step/nce3050k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce3050k.step/nce3050k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
e73dc513ffe6aa95, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).