STD5N52U-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal of the N-channel MOSFET, with a gate-source voltage limit of ±30 V.
2	D	passive	Drain terminal, rated for a drain-source voltage of 650 V and connected to the case, with junction-to-case thermal resistance RthJC of 2.1 °C/W.
3	S	passive	Source terminal, with a continuous source-drain diode current IS of 4 A and a body diode voltage VSD of 1.5 V max.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			650	V		1
Gate-Source Voltage	VGS	-30		30	V		1
Continuous Drain Current	ID			4.2	A	TC = 100 °C	1
Pulsed Drain Current	IDM			18	A		1
Linear Derating Factor				0.48	W/°C		1
Single Pulse Avalanche Energy	EAS			325	mJ		1
Repetitive Avalanche Current	IAR			4	A		1
Repetitive Avalanche Energy	EAR			6	mJ		1
Maximum Power Dissipation	PD			60	W	TC = 25 °C	1
Peak Diode Recovery dV/dt	dV/dt			2.8	V/ns		1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Soldering Recommendations (Peak Temperature)				300		for 10 s	1
Mounting Torque 6-32 or M3 screw				10	lbf · in		1
Mounting Torque 6-32 or M3 screw				1.1	N · m		1
Maximum Junction-to-Ambient Thermal Resistance	RthJA			65	°C/W		2
Maximum Junction-to-Case (Drain) Thermal Resistance	RthJC			2.1	°C/W		2
Drain-Source Breakdown Voltage	VDS	650			V	VGS = 0 V, ID = 250 µA	2
Gate-Source Threshold Voltage	VGS(th)	2.5		5	V	VDS = VGS, ID = 250 µA	2
Gate-Source Leakage	IGSS	-100		100	nA	VGS = ± 30 V	2
Zero Gate Voltage Drain Current	IDSS			25	µA	VDS = 650 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			250	µA	VDS = 520 V, VGS = 0 V, TJ = 125 °C	2
Forward Transconductance	gfs	3.9			S	VDS = 50 V, ID = 3.1 A	2
Total Gate Charge	Qg			48	nC	ID = 3.2 A, VDS = 400 V, VGS = 10 V	2
Gate-Source Charge	Qgs			12	nC		2
Gate-Drain Charge	Qgd			19	nC		2
Continuous Source-Drain Diode Current	IS			4	A		2
Pulsed Diode Forward Current	ISM			21	A		2
Body Diode Voltage	VSD			1.5	V	TJ = 25 °C, IS = 3.2 A, VGS = 0 V	2
Body Diode Reverse Recovery Time	trr		493	739	ns	TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs	2
Body Diode Reverse Recovery Charge	Qrr		2.1	3.2	µC		2

CAD (KiCad official)

Symbol: STD5N52U-VB
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: std5n52u-vb-etched.step / std5n52u-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); std5n52u-vb.step / std5n52u-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (9 pp, sha256 ff53ff8e26247944, retrieved 2026-10-31, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

STD5N52U-VB

Verified STD5N52U-VB

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README