component
SP40P65T2
Public Made by Adomby adom
Siliup MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSP40P65T2
Siliup · MOSFETs · SOT-23
SP40P65T2 from Siliup, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of -1.0 to -2.5 V at ID=-250µA. |
| 2 | S | passive | Source; continuous drain current of -3 A and body-diode forward voltage up to -1.2 V at IS=-1A. |
| 3 | D | passive | Drain; drain-source voltage rated -40 V with pulsed drain current of -12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -40 | V | Ta=25℃ | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | Ta=25℃ | 2 | |
| Continuous Drain Current | ID | -3 | A | Ta=25℃ | 2 | ||
| Pulse Drain Current Tested | IDM | -12 | A | Ta=25℃ | 2 | ||
| Power Dissipation | PD | 0.9 | W | Ta=25℃ | 2 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 138.8 | °C/W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V , ID=-250µA | 2 | ||
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-32V , VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VDS=VGS , ID=-250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 65 | 85 | mΩ | VGS=-10V , ID =-3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 85 | 110 | mΩ | VGS=-4.5V , ID =-2A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| Input Capacitance | Ciss | 520 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 52 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 41 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | ||
| Total Gate Charge | Qg | 9 | nC | VDS=-20V , VGS=-10V , ID=-3A | 2 | ||
| Gate-Source Charge | Qgs | 1 | nC | VDS=-20V , VGS=-10V , ID=-3A | 2 | ||
| Gate-Drain Charge | Qgd | 2.5 | nC | VDS=-20V , VGS=-10V , ID=-3A | 2 | ||
| Turn-On Delay Time | td(on) | 4.2 | nS | VDD=-20V VGS=-10V , RG=3.3Ω , ID=-3A | 2 | ||
| Turn-On Rise Time | tr | 6 | nS | VDD=-20V VGS=-10V , RG=3.3Ω , ID=-3A | 2 | ||
| Turn-Off Delay Time | td(off) | 26.8 | nS | VDD=-20V VGS=-10V , RG=3.3Ω , ID=-3A | 2 | ||
| Turn-Off Fall Time | tf | 20.6 | nS | VDD=-20V VGS=-10V , RG=3.3Ω , ID=-3A | 2 |
CAD (KiCad official)
- Symbol:
SP40P65T2 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
sp40p65t2-etched.step/sp40p65t2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp40p65t2.step/sp40p65t2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (5 pp, sha256
3024e9630d9e2851, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).