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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

2SC3647T-TD-E

onsemi · Bipolar Transistors - BJT · SOT-89-3

2SC3647T-TD-E from onsemi, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Base	input	Base terminal of the NPN transistor; hFE is classified at VCE = 5 V, IC = 100 mA and VEBO is limited to 6 V.
2	Collector	passive	Collector terminal (also the tab) of the NPN transistor, rated VCEO 100 V, VCBO 120 V, IC 2 A continuous and 3 A pulsed.
3	Emitter	passive	Emitter terminal of the NPN transistor, with VEBO rated at 6 V against the base.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	SOT-89-3
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-to-Base Voltage	VCBO			120	V	TA = 25°C	1
Collector-to-Emitter Voltage	VCEO			100	V	TA = 25°C	1
Emitter-to-Base Voltage	VEBO			6	V	TA = 25°C	1
Collector Current	IC			2	A	TA = 25°C	1
Collector Current (Pulse)	ICP			3	A	TA = 25°C	1
Collector Dissipation	PC			500	mW	TA = 25°C	1
Collector Dissipation	PC			1.5	W	When mounted on ceramic substrate (250 mm2 x 0.8 mm)	1
Junction Temperature	Tj			150	°C	TA = 25°C	1
Storage Temperature	Tstg	-55		150	°C	TA = 25°C	1
Collector Cutoff Current	ICBO			100	nA	VCB = 100 V, IE = 0 A	2
Emitter Cutoff Current	IEBO			100	nA	VEB = 4 V, IC = 0 A	2
DC Current Gain (rank T)	hFE	200		400		VCE = 5 V, IC = 100 mA	2
Collector-to-Emitter Saturation Voltage	VCE(sat)		0.13	0.4	V	IC = 1 A, IB = 100 mA	2
Base-to-Emitter Saturation Voltage	VBE(sat)		0.85	1.2	V	IC = 1 A, IB = 100 mA	2
Collector-to-Base Breakdown Voltage	V(BR)CBO	120			V	IC = 10 A, IE = 0 A	2
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	100			V	IC = 1 mA, RBE = ∞	2
Emitter-to-Base Breakdown Voltage	V(BR)EBO	6			V	IE = 10 A, IC = 0 A	2
Gain-Bandwidth Product	fT		120		MHz	VCE = 10 V, IC = 100 mA	2
Output Capacitance	Cob		16		pF	VCB = 10 V, f = 1 MHz	2
Turn-On Time	ton		80		ns	See specified Test Circuit.	2
Storage Time	tstg		1000		ns	See specified Test Circuit.	2
Fall Time	tf		50		ns	See specified Test Circuit.	2

CAD (KiCad official)

Symbol: 2SC3647T-TD-E
Footprint: Package_TO_SOT_SMD:SOT-89-3
3D model: SOT-89-3 (KiCad packages3D, STEP)
3D model files: 2sc3647t-td-e-etched.step / 2sc3647t-td-e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sc3647t-td-e.step / 2sc3647t-td-e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (7 pp, sha256 dd9cc25a8c2ed863, retrieved 2026-10-30, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF