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IRFBG20PBF

Public Made by Adom

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Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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IRFBG20PBF

Vishay Intertech · MOSFETs · TO-220AB

IRFBG20PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage is rated at ±20 V (VGS), and the datasheet gives total gate charge Qg max. 38 nC.
2 D passive Drain of the N-channel MOSFET; rated for drain-source voltage VDS of 1000 V and continuous drain current ID of 1.4 A at TC = 25 °C (0.86 A at TC = 100 °C).
3 S passive Source of the N-channel MOSFET; the integral body diode has a continuous source-drain current IS of 1.4 A and pulsed current ISM of 5.6 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 1000 V 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID 1.4 A VGS at 10 V, TC = 25 °C 1
Continuous drain current ID 0.86 A VGS at 10 V, TC = 100 °C 1
Pulsed drain current IDM 5.6 A 1
Linear derating factor 0.43 W/°C 1
Single pulse avalanche energy EAS 200 mJ 1
Repetitive avalanche current IAR 1.4 A 1
Repetitive avalanche energy EAR 5.4 mJ 1
Maximum power dissipation PD 54 W TC = 25 °C 1
Peak diode recovery dV/dt dV/dt 1 V/ns 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Soldering recommendations (peak temperature) 300 °C For 10 s 1
Mounting torque 6-32 or M3 screw 10 lbf · in 1
Mounting torque 6-32 or M3 screw 1.1 N · m 1
Maximum junction-to-ambient RthJA 62 °C/W 2
Case-to-sink, flat, greased surface RthCS 0.5 °C/W Case-to-sink, flat, greased surface 2
Maximum junction-to-case (drain) RthJC 2.3 °C/W 2
Drain-source breakdown voltage VDS 1000 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero gate voltage drain current IDSS 100 μA VDS = 1000 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 500 μA VDS = 800 V, VGS = 0 V, TJ = 125 °C 2
Drain-source on-state resistance RDS(on) 11 Ω VGS = 10 V ID = 0.84 A 2
Forward transconductance gfs 1 S VDS = 50 V, ID = 0.84 A 2
Gate input resistance Rg 0.6 3.4 Ω f = 1 MHz, open drain 2
Total gate charge Qg 38 nC VGS = 10 V ID = 1.4 A, VDS = 400 V 2
Gate-source charge Qgs 4.9 nC 2
Gate-drain charge Qgd 22 nC 2
Continuous source-drain diode current IS 1.4 A 2
Pulsed diode forward current ISM 5.6 A 2
Body diode voltage VSD 1.5 V TJ = 25 °C, IS = 1.4 A, VGS = 0 V 2
Body diode reverse recovery time trr 130 190 ns TJ = 25 °C, IF = 1.4 A, dI/dt = 100 A/μs 2
Body diode reverse recovery charge Qrr 0.46 0.69 μC 2

CAD (KiCad official)

  • Symbol: IRFBG20PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfbg20pbf-etched.step / irfbg20pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfbg20pbf.step / irfbg20pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 3318cf95f3d7450b, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF