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Contents

README

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MGH038N10N

Megain · MOSFETs · TO-263

MGH038N10N from Megain, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with an absolute maximum VGS of ±20 V and a gate threshold VGS(th) of 2 to 4 V at ID=250 uA.
2 D passive Drain, the center lead stub, which is also the exposed metal tab; rated for VDS 100 V and ID 120 A continuous at TC=25°C.
3 S passive Source; carries the continuous source current up to 120 A, with RDS(ON) of 3.8 mΩ typ (4.5 mΩ max) at VGS=10 V, ID=30 A.

Key specifications

Parameter Value
Manufacturer Megain
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current, Continuous ID 120 A TC=25℃ 1
Drain Current, Continuous ID 100 A TC=100℃ 1
Drain Current, Continuous ID 15.6 A TA=25℃ 1
Drain Current, Continuous ID 12.4 A TA=70℃ 1
Pulsed Drain Current IDM 480 A 1
Single Pulse Avalanche Energy EAS 702 mJ 1
Avalanche Current IAS 53 A 1
Total Power Dissipation PD 250 W TC=25°C 1
Total Power Dissipation PD 100 W TC=100°C 1
Total Power Dissipation PD 2 W TA=25°C 1
Total Power Dissipation PD 1.3 W TA=70°C 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction to Ambient RJA 62 ℃/W 2
Thermal Resistance Junction to Case RJC 0.5 ℃/W 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Drain-Source On-state Resistance RDS(ON) 3.8 4.5 mΩ VGS=10V, ID=30A 2
Gate Threshold Voltage VGS(th) 2 3 4 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=100V, VGS=0V 2
Drain-Source Leakage Current IDSS 10 uA VDS=100V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 120 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.3 V VGS=0V, IS=50A 2
Forward Transconductance gfs 50 S VDS=5V, ID=30A 2
Gate Resistance Rg 1 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (10V) Qg 72 nC VDS=50V, VGS=10V, ID=20A 2
Gate-Source Charge Qgs 28 nC 2
Gate-Drain Charge Qgd 15 nC 2
Turn-on Delay Time Td(ON) 35 nS VDS=50V, VGS=10V, RG=3Ω, ID=20A 2
Turn-on Rise Time Tr 18 nS 2
Turn-off Delay Time Td(OFF) 45 nS 2
Turn-off Fall Time Tf 55 nS 2
Input Capacitance Ciss 4725 pF VDS=50V, VGS=0V, F=1MHz 2
Output Capacitance Coss 609 pF 2
Reverse Transfer Capacitance Crss 14 pF 2
Reverse Recovery Time trr 70 nS IF=30A, dlF/dt=100A/us 2
Reverse Recovery Charge Qrr 170 nC 2

CAD (KiCad official)

  • Symbol: MGH038N10N
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: mgh038n10n-etched.step / mgh038n10n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mgh038n10n.step / mgh038n10n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Megain datasheet (5 pp, sha256 0a2b57ee1efa34fa, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF