component
S8550W
Public Made by Adomby adom
CBI Bipolar (BJT), SOT323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownS8550W
CBI · Bipolar (BJT) · SOT323
S8550W from CBI, in a SOT323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor, with emitter-base voltage limited to VEBO -5 V and VBE(sat) of -1.2 V at IC=-500 mA, IB=-50 mA. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, with emitter-base breakdown V(BR)EBO of -5 V minimum at IE=-100 µA and emitter cut-off current IEBO of -0.1 µA maximum at VEB=-3 V. |
| 3 | COLLECTOR | passive | Collector terminal, rated for continuous collector current IC of -0.5 A, VCEO of -25 V, VCBO of -40 V, and collector power dissipation PC of 0.3 W. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter saturation voltage | VCE(sat) | -0.6 | V | IC=-500mA, IB= -50mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-500mA, IB= -50mA | 1 | ||
| Collector cut-off current | ICBO | -0.1 | µA | VCB= -40V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -0.1 | µA | VEB= -3V, IC=0 | 1 | ||
| DC current gain | hFE(1) | 120 | 400 | VCE= -1V, IC= -50mA | 1 | ||
| DC current gain | hFE(2) | 50 | VCE= -1V, IC= -500mA | 1 | |||
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC = -100µA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -25 | V | IC =-1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE= -100µA, IC=0 | 1 | ||
| Transition frequency | fT | 150 | MHz | VCE= -6V, IC= -20mA, f=30MHz | 1 | ||
| Collector-base voltage | VCBO | -40 | V | 1 | |||
| Collector-emitter voltage | VCEO | -25 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current, continuous | IC | -0.5 | A | 1 | |||
| Collector power dissipation | PC | 0.3 | W | 1 | |||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
S8550W - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT323 (KiCad packages3D, STEP)
- 3D model files:
s8550w-etched.step/s8550w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s8550w.step/s8550w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CBI datasheet (3 pp, sha256
c663af5ea3460fcd, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).