component
BCD7N65
Public Made by Adomby adom
baocheng Shandong Baocheng Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBCD7N65
baocheng Shandong Baocheng Elec · MOSFETs · TO-252
BCD7N65 from baocheng Shandong Baocheng Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the gate-source voltage is rated at ±30 V (VGSS) with a threshold of 2 V to 4 V at ID=250 uA. |
| 2 | D | passive | Drain, connected to the mounting tab; VDSS is 650 V and continuous drain current is 7 A at TC=25°C (28 A pulsed). |
| 3 | S | passive | Source; continuous body-diode forward current is 7 A (28 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | baocheng Shandong Baocheng Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Gate-Source voltage | VGSS | -30 | 30 | V | 1 | ||
| Continuous drain current | ID | 7 | A | TC = 25°C | 1 | ||
| Continuous drain current | ID | 4.3 | A | TC = 100°C | 1 | ||
| Pulsed drain current | IDM | 28 | A | 1 | |||
| Avalanche energy, single pulse | EAS | 352 | mJ | 1 | |||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | 1 | |||
| Power Dissipation TO-252 | PD | 100 | W | TC = 25°C | 1 | ||
| Operating junction and storage temperature range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Continuous diode forward current | IS | 7 | A | 1 | |||
| Diode pulse current | IS,pulse | 28 | A | 1 | |||
| Thermal resistance, junction-to-case (TO-252) | RθJC | 1.25 | °C/W | 1 | |||
| Thermal resistance, junction-to-ambient (TO-252) | RθJA | 110 | °C/W | 1 | |||
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=250 uA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250 uA | 2 | |
| Drain cut-off current (Tj = 25°C) | IDSS | 1 | μA | VDS=650 V, VGS=0 V, Tj = 25°C | 2 | ||
| Gate leakage current, forward | IGSSF | 100 | nA | VGS=30 V, VDS=0 V | 2 | ||
| Gate leakage current, reverse | IGSSR | -100 | nA | VGS=-30 V, VDS=0 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 1.2 | 1.4 | Ω | VGS=10 V, ID=3.5 A | 2 | |
| Diode forward voltage | VSD | 0.85 | 1.5 | V | VGS=0 V, IF=7 A | 2 |
CAD (KiCad official)
- Symbol:
BCD7N65 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
bcd7n65-etched.step/bcd7n65-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcd7n65.step/bcd7n65.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: baocheng Shandong Baocheng Elec datasheet (8 pp, sha256
c95ef0a995dbc014, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).