component
FDS6690A-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDS6690A-VB
VBsemi Elec · MOSFETs · SO-8
FDS6690A-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS rated ±20 V with threshold of 1.0 to 3.0 V at ID = 250 µA. |
| 5 | D | passive | Drain of the N-channel MOSFET, tied with pins 6, 7 and 8; VDS rated 30 V. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 7 and 8; VDS rated 30 V. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 6 and 8; VDS rated 30 V. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 6 and 7; VDS rated 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 20 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Forward Transconductance | gfs | 50 | S | VDS = 15 V, ID = 10 A | 2 | ||
| Gate Resistance | Rg | 0.36 | 1.8 | 3.6 | Ω | f = 1 MHz | 2 |
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 9 A | 2 | |
| Drain-Source Voltage | VDS | 30 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Pulsed Drain Current | IDM | 45 | A | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 39 | 55 | °C/W | t ≤ 10 s, surface mounted on 1" x 1" FR4 board | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 25 | 29 | °C/W | Steady State | 1 |
CAD (KiCad official)
- Symbol:
FDS6690A-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fds6690a-vb-etched.step/fds6690a-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds6690a-vb.step/fds6690a-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
9018b9859a3d065d, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).