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NCEP025N60G

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Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorncep025n60gfactory-2.0.0extractor-text

Verified NCEP025N60G

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier lcsc, 9 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: NCEP025N60G · DFN5X6-8L · 9 pins
  • ✓copper: 16 copper pads, none touching another net
  • ✓datasheet: all 9 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: DFN-S-8-1EP_6x5mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-66ru4viw/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 9 pins = 9 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 9 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ncep025n60g.kicad_sym✓ ncep025n60g.kicad_mod✓ ncep025n60g.step
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3D Model

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Symbol & Footprint

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Contents

README

markdown

NCEP025N60G

Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L

NCEP025N60G from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (pin 1 of the S1-S3 source group); VDS rating 60 V, continuous ID 165 A.
2 S passive Source terminal of the N-channel MOSFET (pin 2 of the S1-S3 source group); VDS rating 60 V, continuous ID 165 A.
3 S passive Source terminal of the N-channel MOSFET (pin 3 of the S1-S3 source group); VDS rating 60 V, continuous ID 165 A.
4 G input Gate terminal of the N-channel MOSFET with a gate-source voltage limit of ±20 V and a threshold of 2.0 V min to 4.0 V max at 250 µA.
5 D passive Drain terminal (pin 5 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A.
6 D passive Drain terminal (pin 6 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A.
7 D passive Drain terminal (pin 7 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A.
8 D passive Drain terminal (pin 8 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package DFN5X6-8L
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous (Silicon Limited) ID 165 A 1
Drain Current-Continuous (TC=100℃) ID (100℃) 115 A TC=100℃ 1
Pulsed Drain Current IDM 660 A 1
Maximum Power Dissipation PD 145 W 1
Single pulse avalanche energy EAS 540 mJ Note 5: Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 0.86 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 2.2 2.5 mΩ VGS=10V, ID=82.5A 2
Forward Transconductance gFS 45 S VDS=5V, ID=82.5A 2
Diode Forward Current IS 165 A 2

CAD (KiCad official)

  • Symbol: NCEP025N60G
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: ncep025n60g-etched.step / ncep025n60g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep025n60g.step / ncep025n60g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (8 pp, sha256 a2aedf21344a63cb, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF