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Contents

README

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DMG9933USD-13

Diodes Incorporated · MOSFETs · SO-8

DMG9933USD-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1 (Q1); the device is rated for VDSS of -20V and VGSS of ±12V.
2 G1 input Gate of P-channel MOSFET 1 (Q1); gate threshold VGS(th) is -0.45V to -1.1V at ID = -250µA and maximum VGS is ±12V.
3 S2 passive Source of P-channel MOSFET 2 (Q2); the device is rated for VDSS of -20V and VGSS of ±12V.
4 G2 input Gate of P-channel MOSFET 2 (Q2); gate threshold VGS(th) is -0.45V to -1.1V at ID = -250µA and maximum VGS is ±12V.
5 D2 passive Drain of P-channel MOSFET 2 (Q2), connected to pin 6; continuous drain current is -4.6A at TA = +25°C and pulsed IDM is -20A.
6 D2 passive Drain of P-channel MOSFET 2 (Q2), connected to pin 5; continuous drain current is -4.6A at TA = +25°C and pulsed IDM is -20A.
7 D1 passive Drain of P-channel MOSFET 1 (Q1), connected to pin 8; continuous drain current is -4.6A at TA = +25°C and pulsed IDM is -20A.
8 D1 passive Drain of P-channel MOSFET 1 (Q1), connected to pin 7; continuous drain current is -4.6A at TA = +25°C and pulsed IDM is -20A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -20 V 2
Gate-Source Voltage VGSS -12 12 V 2
Continuous Drain Current ID -4.6 A VGS = -4.5V, Steady State, TA = +25°C 2
Continuous Drain Current ID -3 A VGS = -4.5V, Steady State, TA = +85°C 2
Pulsed Drain Current IDM -20 A 2
Power Dissipation PD 1.15 W Device mounted on FR-4 PCB, minimum recommended pad layout 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Thermal Resistance, Junction to Ambient RθJA 109 °C/W TA = +25°C 2
Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA TJ = +25°C, VDS = -16V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±12V, VDS = 0V 2
Gate Threshold Voltage VGS(th) -0.45 -1.1 V VDS = VGS, ID = -250μA 2
Static Drain-Source On-Resistance RDS(ON) 55 75 mΩ VGS = -4.5V, ID = -4.8A 2
Static Drain-Source On-Resistance RDS(ON) 76 110 mΩ VGS = -2.5V, ID = -1A 2
Diode Forward Voltage VSD -0.8 -1.2 V VGS = 0V, IS = -2A 2
Forward Transfer Admittance /Yfs/ 10 S VDS = -9V, ID = -3.4A 2
Input Capacitance Ciss 608.4 pF VDS = -6V, VGS = 0V, f = 1MHz 2
Output Capacitance Coss 81.5 pF VDS = -6V, VGS = 0V, f = 1MHz 2
Reverse Transfer Capacitance Crss 72.4 pF VDS = -6V, VGS = 0V, f = 1MHz 2
Gate Resistance Rg 44.91 Ω VDS = 0V, VGS = 0V, f = 1MHz 2
Total Gate Charge Qg 6.5 nC VDS = -10V, VGS = -4.5V, ID = -3.2A 2
Gate-Source Charge Qgs 0.9 nC VDS = -10V, VGS = -4.5V, ID = -3.2A 2
Gate-Drain Charge Qgd 1.5 nC VDS = -10V, VGS = -4.5V, ID = -3.2A 2
Turn-On Delay Time tD(on) 12.45 ns VDS = -10V, VGS = -4.5V, RL = 10Ω, RG = 1Ω, ID = -1A 2
Turn-On Rise Time tr 10.29 ns VDS = -10V, VGS = -4.5V, RL = 10Ω, RG = 1Ω, ID = -1A 2
Turn-Off Delay Time tD(off) 46.52 ns VDS = -10V, VGS = -4.5V, RL = 10Ω, RG = 1Ω, ID = -1A 2
Turn-Off Fall Time tf 22.19 ns VDS = -10V, VGS = -4.5V, RL = 10Ω, RG = 1Ω, ID = -1A 2
Thermal Resistance, Junction to Ambient (transient thermal figure) RθJA 156 °C/W Fig. 12 Transient Thermal Resistance 5

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections: See Diagram Below  Terminals: Finish  Matte Tin Annealed over Copper 1

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: DMG9933USD-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8, generated on the KiCad land (body 3.85 x 4.9 mm, terminals on the pads, 1.45 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: dmg9933usd-13-etched.step / dmg9933usd-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmg9933usd-13.step / dmg9933usd-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 549f78d8afb81f26, retrieved 2026-11-13, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF