component
KBU806
Public Made by Adomby adom
MDD Microdiode Semiconductor Bridge Rectifiers, KBU. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKBU806
MDD Microdiode Semiconductor · Bridge Rectifiers · KBU
KBU806 from MDD Microdiode Semiconductor, in a KBU. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | + | power_out | Positive DC output of the bridge rectifier (pin 1, marked + on the package drawing). |
| 2 | AC1 | passive | AC input terminal (marked ~ on the drawing); the bridge is rated for 600 V repetitive peak reverse voltage (VRRM) on the KBU806. |
| 3 | AC2 | passive | AC input terminal (marked ~ on the drawing); the bridge is rated for 420 V RMS (VRMS) on the KBU806. |
| 4 | - | power_in | Negative DC output of the bridge rectifier (pin 4, marked − on the package drawing), the DC return. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MDD Microdiode Semiconductor |
| Package | KBU |
| Category | Diodes |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | 600 | V | 1 | |||
| Maximum RMS voltage | VRMS | 420 | V | 1 | |||
| Maximum DC blocking voltage | VDC | 600 | V | 1 | |||
| Maximum average forward output rectified current | I(AV) | 8 | A | at TA=50 ℃ | 1 | ||
| Peak forward surge current | IFSM | 300 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | 1 | ||
| Maximum instantaneous forward voltage drop per bridge element | VF | 1.1 | V | per bridge element at 8.0A | 1 | ||
| Maximum DC reverse current | IR | 10 | μA | TA=25°C at rated DC blocking voltage | 1 | ||
| Maximum DC reverse current | IR | 0.5 | mA | TA=125°C at rated DC blocking voltage | 1 | ||
| Operating junction temperature range | TJ | -55 | 150 | °C | 1 | ||
| Storage temperature range | TSTG | -55 | 150 | °C | 1 | ||
| Typical Junction Capacitance | CJ | 200 | pF | Note 1 | 1 | ||
| Typical Thermal Resistance | RθJA | 2.7 | °C/W | Note 2 | 1 |
CAD (KiCad official)
- Symbol:
KBU806 - Footprint:
Diode_THT:Diode_Bridge_Vishay_KBU - 3D model: KBU (KiCad packages3D, STEP)
- 3D model files:
kbu806-etched.step/kbu806-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kbu806.step/kbu806.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MDD Microdiode Semiconductor datasheet (2 pp, sha256
71c9e8b3a1c01d94, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).