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Contents

README

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LMR51625XFDDCR

Texas Instruments · DC-DC Converters · SOT-23-6

LMR51625XFDDCR from Texas Instruments, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 FB input Feedback input to the converter; connect a resistor divider to set the output voltage, and never short this terminal to ground during operation.
2 EN input Precision enable input that must not be left floating (high = on, low = off), can be tied to VIN, and allows an adjustable UVLO through an external resistor divider.
3 VIN power_in Supply input to the internal bias LDO and high-side FET, connected to the input supply, with input bypass capacitors CIN placed directly between this pin and GND.
4 GND power_in Power ground pin connected internally to the source of the low-side FET; connect to system ground with the path to CIN kept as short as possible.
5 SW power_out Switching output of the converter, internally connected to the high-side FET source and low-side FET drain, which connects to the power inductor.
6 CB passive Bootstrap capacitor connection for the high-side FET driver; connect a high-quality 100nF capacitor from this pin to the SW pin.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOT-23-6
Category Power Management (PMIC)
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input voltage VIN to GND (absolute maximum) VIN -0.3 63 V 4
Input voltage EN to GND (absolute maximum) EN -0.3 V Printed maximum is VIN + 0.3 V 4
Input voltage FB to GND (absolute maximum) FB -0.3 5.5 V 4
Output voltage SW to GND (absolute maximum) SW -0.3 63 V 4
Output voltage SW to GND transients (absolute maximum) SW -3.5 65 V less than 10ns transients 4
Output voltage CB to SW (absolute maximum) CB -0.3 5.5 V 4
Junction temperature (absolute maximum) TJ -40 150 °C 4
Storage temperature (absolute maximum) Tstg -55 150 °C 4
Input voltage VIN to GND (recommended) VIN 4.3 60 V 4
Input voltage EN (recommended) EN 0 V Printed maximum is VIN 4
Input voltage FB (recommended) FB 0 4.5 V 4
Output voltage VOUT (recommended) VOUT 0.8 30 V 4
Output current IOUT (LM51625, 2.5A version) IOUT 2.5 A Maximum continuous DC current can be derated at high switching frequency or high ambient temperature 4
Operating junction temperature (recommended) TJ -40 150 °C 4
VIN UVLO rising threshold VIN_UVLO(R) 4 4.25 V VIN rising 5
EN voltage rising threshold VEN(R) 1.103 1.226 1.349 V EN rising, enable switching 5
EN voltage falling threshold VEN(F) 0.887 0.985 1.084 V EN falling, disable switching 5
EN pin sourcing current post EN rising threshold IEN(P2) 10 50 nA post EN rising threshold VEN = 3V 5
Reference voltage VFB 0.792 0.8 0.808 V 5
Switching frequency, CCM operation, X version fSW1(CCM) 360 400 440 kHz X version, VIN = 24V 5
High-side peak current limit, 2.5A version IHS_PK(OC) 2.9 3.7 4.5 A 2.5A version 6
Low-side valley current limit, 2.5A version ILS_V(OC) 2.3 2.8 3.3 A 2.5A version 6
VIN shutdown supply current ISD(VIN) 2 µA VEN = 0V 5
VIN UVLO falling threshold VIN_UVLO(F) 3.8 V VIN falling 5
VIN UVLO hysteresis VIN_UVLO(H) 0.2 V 5
FB input leakage current IFB(LKG) 0.2 nA VFB = 0.8V 5
Internal fixed soft-start time tSS 4 ms The time of internal reference to increase from 0.08V to 0.72V 5
High-side MOSFET on-resistance RDSON(HS) 85 mΩ ISW = -100mA 5
Low-side MOSFET on-resistance RDSON(LS) 45 mΩ ISW = 100mA 6
Minimum ON pulse width tON-MIN 70 ns VIN = 24V, IOUT = 1A 6
Maximum ON pulse width tON-MAX 5 µs VIN = 24V, IOUT = 1A 6
Minimum OFF pulse width tOFF-MIN 200 ns VIN = 24V 6
Low-side negative current limit, 2.5A version ILS(NOC) -2 A FPWM option, 2.5A version 6
Zero-cross detection current threshold IZC 0 A 6
FB pin voltage to trip short circuit hiccup mode VHICCUP 0.32 V 6
Time between current-limit hiccup burst tHICCUP 85 ms 6
Thermal shutdown threshold TJ(SD) 165 °C Temperature rising 6
Thermal shutdown hysteresis TJ(HYS) 20 °C 6
Junction-to-ambient thermal resistance RθJA 105.2 °C/W 5
Junction-to-ambient thermal resistance with TI EVM RθJA(effective) 48.5 °C/W with TI EVM 5
Junction-to-case (top) thermal resistance RθJC(top) 49.8 °C/W 5
Junction-to-board thermal resistance RθJB 24.1 °C/W 5
Junction-to-top characterization parameter ψJT 6.2 °C/W 5
Junction-to-board characterization parameter ψJB 23.9 °C/W 5

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper The SW pin connecting to the inductor must be as short as possible, and just wide enough to carry the load current without excessive heating. Short, thick traces or copper pours (shapes) must be used 22

CAD (KiCad official)

  • Symbol: LMR51625XFDDCR
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: lmr51625xfddcr-etched.step / lmr51625xfddcr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lmr51625xfddcr.step / lmr51625xfddcr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (34 pp, sha256 e1f7a10d36b45dc9, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF