component

13003SQ

Public Made by Adom

by adom

PJSEMI Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristors13003sqfactory-2.0.0extractor-text
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3D Model

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Symbol & Footprint

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PCB Footprint

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Datasheet

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Contents

README

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13003SQ

PJSEMI · Bipolar (BJT) · SOT-89

13003SQ from PJSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base of the NPN transistor; VEBO max 9 V.
2 Collector passive Collector of the NPN transistor; VCBO 800 V, VCEO 430 V, IC 1.5 A continuous, ICM 3 A peak.
3 Emitter passive Emitter of the NPN transistor; VEBO max 9 V relative to base.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Base Voltage VCBO 800 V 1
Collector Emitter Voltage VCEO 430 V 1
Emitter Base Voltage VEBO 9 V 1
Collector Current IC 1.5 A 1
Peak Collector Current ICM 3 A 1
Maximum Power Dissipation PD 800 mW 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
DC Current Gain HFE 10 40 VCE = 2 V, IC = 500 mA 2
DC Current Gain HFE 8 40 VCE = 2 V, IC = 1 A 2
DC Current Gain HFE 15 40 VCE = 5 V, IC = 200 mA 2
Collector Base Cutoff Current ICBO 10 μA VCB = 700 V 2
Emitter Base Cutoff Current IEBO 10 μA VEB = 9 V 2
Collector Base Breakdown Voltage V(BR)CBO 800 V IC = 500 μA 2
Collector Emitter Breakdown Voltage V(BR)CEO 430 V IC = 5 mA 2
Emitter Base Breakdown Voltage V(BR)EBO 9 V IE = 500 μA 2
Collector Emitter Saturation Voltage VCE(sat) 0.5 V IC = 500 mA, IB = 100 mA 2
Collector Emitter Saturation Voltage VCE(sat) 1 V IC = 1 A, IB = 250 mA 2
Base Emitter Saturation Voltage VBE(sat) 1 V IC = 500 mA, IB = 100 mA 2
Base Emitter Saturation Voltage VBE(sat) 1.2 V IC = 1 A, IB = 250 mA 2
Transition Frequency FT 4 MHz VCE = 10 V, IC = 100 mA 2

CAD (KiCad official)

  • Symbol: 13003SQ
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 13003sq-etched.step / 13003sq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 13003sq.step / 13003sq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (7 pp, sha256 9752f1112f781932, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF