component
IRLB3034
Public Made by Adomby adom
UMW MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRLB3034
UMW · MOSFETs · TO-220
IRLB3034 from UMW, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-to-source voltage VGS is rated at ±20 V. |
| 2 | D | passive | Drain terminal; the drain-to-source breakdown voltage V(BR)DSS is 40 V and the continuous drain current is 195 A at TC=25°C (package limited). |
| 3 | S | passive | Source terminal; the continuous body-diode source current IS is 343 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 40 | V | ID=250µA, VGS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS=VGS, ID=250μA | 3 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 1.4 | 1.7 | mΩ | VGS=10V, ID=195A | 3 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 1.6 | 2 | mΩ | VGS=4.5V, ID=172A | 3 | |
| Drain-to-Source Leakage Current | IDSS | 20 | µA | VDS=40V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | µA | VDS=40V, VGS=0V, TJ=125°C | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Diode Forward Voltage | VSD | 1.3 | 1.7 | V | TJ=25°C, IS=195, VGS=0V | 4 | |
| Continuous Drain Current (Silicon Limited) | ID | 343 | A | VGS=10V (Silicon Limited), TC=25°C | 1 | ||
| Continuous Drain Current (Silicon Limited) | ID | 243 | A | VGS=10V (Silicon Limited), TC=100°C | 1 | ||
| Continuous Drain Current (Package Limited) | ID | 195 | A | VGS=10V (Package Limited), TC=25°C | 1 | ||
| Pulsed Drain Current | IDM | 1372 | A | 1 | |||
| Maximum Power Dissipation | PD | 375 | W | TC=25°C | 1 | ||
| Linear Derating Factor | 2.5 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Peak Diode Recovery | dv/dt | 4.6 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | 10 seconds (1.6mm from case) | 1 | |||
| Mounting Torque | 10 | lbin | 6-32 or M3 screw | 1 | |||
| Single Pulse Avalanche Energy | EAS | 255 | mJ | Starting TJ=25°C, L=0.013mH, RG=25Ω, IAS=195A, VGS=10V | 2 | ||
| Junction-to-Case | RθJC | 0.4 | °C/W | Rθ measured at TJ approximately 90°C | 2 | ||
| Junction-to-Ambient | RθJA | 62 | °C/W | 2 | |||
| Case-to-Sink, Flat Greased Surface | RθCS | 0.5 | °C/W | Flat, Greased Surface | 2 |
CAD (KiCad official)
- Symbol:
IRLB3034 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
irlb3034-etched.step/irlb3034-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlb3034.step/irlb3034.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (13 pp, sha256
86e581b81a539f52, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).