component
BC807-40HR
Public Made by Adomby adom
Nexperia Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownBC807-40HR
Nexperia · Bipolar Transistors - BJT · SOT-23
BC807-40HR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal for controlling transistor conduction with peak base current maximum of 200 mA. |
| 2 | E | passive | Emitter terminal providing the return current path in PNP transistor operation. |
| 3 | C | passive | Collector terminal conducting up to 500 mA continuously with maximum collector-emitter voltage of 45 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCBO | -50 | V | open emitter | 3 | ||
| collector-emitter voltage | VCEO | -45 | V | open base | 3 | ||
| emitter-base voltage | VEBO | -7 | V | open collector | 3 | ||
| collector current | IC | -500 | mA | 3 | |||
| peak collector current | ICM | -1 | A | single pulse; tp ≤ 1 ms | 3 | ||
| peak base current | IBM | -200 | mA | single pulse; tp ≤ 1 ms | 3 | ||
| total power dissipation | Ptot | 320 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint [1] | 3 | ||
| total power dissipation | Ptot | 440 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 [2] | 3 | ||
| total power dissipation | Ptot | 460 | mW | Tamb ≤ 25 °C; FR4 PCB, 4-layer copper, tin-plated, standard footprint [3] | 3 | ||
| total power dissipation | Ptot | 540 | mW | Tamb ≤ 25 °C; FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2 [4] | 3 | ||
| junction temperature | Tj | 175 | °C | 3 | |||
| ambient temperature | Tamb | -55 | 175 | °C | 3 | ||
| storage temperature | Tstg | -65 | 175 | °C | 3 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 470 | K/W | FR4 PCB, single-sided copper, tin-plated, standard footprint [1] | 5 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 340 | K/W | FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 [2] | 5 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 325 | K/W | FR4 PCB, 4-layer copper, tin-plated, standard footprint [3] | 5 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 280 | K/W | FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2 [4] | 5 | ||
| thermal resistance from junction to solder point | R(j-sp) | 110 | K/W | in free air | 5 | ||
| collector-base breakdown voltage | V(BR)CBO | -50 | V | IC = -100 µA; IE = 0 A | 7 | ||
| collector-emitter breakdown voltage | V(BR)CEO | -45 | V | IC = -10 mA; IB = 0 A | 7 | ||
| emitter-base breakdown voltage | V(BR)EBO | -7 | V | IE = -100 µA; IC = 0 A | 7 | ||
| collector-base cut-off current | ICBO | -100 | nA | VCB = -25 V; IE = 0 A | 7 | ||
| collector-base cut-off current | ICBO | -5 | μA | VCB = -25 V; IE = 0 A; Tj = 150 °C | 7 | ||
| emitter-base cut-off current | IEBO | -100 | nA | VEB = -5 V; IC = 0 A | 7 | ||
| DC current gain (BC807-40H) | hFE | 250 | 600 | VCE = -1 V; IC = -100 mA; [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 7 | ||
| DC current gain | hFE | 40 | VCE = -1 V; IC = -500 mA; [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 7 | |||
| collector-emitter saturation voltage | VCEsat | -700 | mV | IC = -500 mA; IB = -50 mA; [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 7 | ||
| base-emitter saturation voltage | VBEsat | -1.2 | V | IC = -500 mA; IB = -50 mA; [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 7 | ||
| base-emitter voltage | VBE | -1.2 | V | VCE = -1 V; IC = -500 mA; [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 7 | ||
| transition frequency | fT | 80 | MHz | VCE = -5 V; IC = -10 mA; f = 100 MHz | 7 | ||
| emitter capacitance (BC807-40H) | Ce | 37 | pF | VEB = -0.5 V; IC = ic = 0 A; f = 1 MHz | 7 |
CAD (KiCad official)
- Symbol:
BC807-40HR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bc807-40hr-etched.step/bc807-40hr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc807-40hr.step/bc807-40hr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (21 pp, sha256
7c99b4c96bd6b743, retrieved 2026-09-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).