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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

H11D1

Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · DIP-6

H11D1 from Vishay Intertech, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	A	passive	Anode of the GaAs infrared emitting diode; forward current max 60 mA, forward voltage 1.2 V typ at IF = 10 mA, reverse voltage max 6 V.
2	C	passive	Cathode of the infrared emitting diode (input side).
3	NC	unconnected	No internal connection.
4	E	passive	Phototransistor emitter; emitter base voltage max 7 V.
5	C	passive	Phototransistor collector; VCEO max 300 V (H11D1/H11D2) or 200 V (H11D3), collector current max 50 mA.
6	B	passive	Phototransistor base connection; collector base voltage max 300 V (H11D1/H11D2) or 200 V (H11D3), tested with RBE = 1 MΩ.

Key specifications

Parameter	Value
Manufacturer	Vishay Intertech
Package	DIP-6
Category	Optoisolators
Pins	6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Forward voltage	VF		1.2	1.5	V	IF = 10 mA	2
Reverse voltage	VR	6			V	IR = 10 μA	2
Reverse current	IR		0.01	10	μA	VR = 6 V	2
Collector emitter breakdown voltage	BVCEO	300			V	ICE = 1 mA, RBE = 1 MΩ	2
Emitter base breakdown voltage	BVEBO	7			V	IEB = 10 μA	2
Collector emitter saturation voltage	VCEsat		0.25	0.4	V	IF = 10 mA, IC = 0.5 mA, RBE = 1 MΩ	3
Collector emitter leakage current	ICEO			100	nA	VCE = 200 V, RBE = 1 MΩ	3
Current transfer ratio	CTR	20			%	IF = 10 mA, VCE = 10 V	3
Reverse voltage	VR			6	V	Tamb = 25 °C	2
Input forward current	IF			60	mA	Tamb = 25 °C	2
Input power dissipation	Pdiss			100	mW	Tamb = 25 °C	2
Collector emitter voltage	VCEO			300	V	H11D1, Tamb = 25 °C	2
Collector base voltage	VCBO			300	V	H11D1, Tamb = 25 °C	2
Emitter base voltage	VEBO			7	V	Tamb = 25 °C	2
Collector current	IC			50	mA	Tamb = 25 °C	2
Output power dissipation	Pdiss			150	mW	Tamb = 25 °C	2
Storage temperature range	Tstg	-55		125	°C		2
Operating temperature range	Tamb	-55		100	°C		2
Soldering temperature	Tsld			260	°C	t = 10 s	2
Maximum rated withstanding isolation voltage	VISO			5000	VRMS	According to UL1577, t = 1 min	3
Input capacitance	CI		30		pF	VR = 0 V, f = 1 kHz	2
Coupling capacitance	CIO		0.6		pF	V = 0 V, f = 1 MHz	3
Turn-on time	ton		4		μs	IC = 2 mA, RL = 100 Ω, VCC = 5 V	3
Turn-off time	toff		5		μs	IC = 2 mA, RL = 100 Ω, VCC = 5 V	3

CAD (KiCad official)

Symbol: H11D1
Footprint: Package_DIP:DIP-6_W7.62mm
3D model: DIP-6 (KiCad packages3D, STEP)
3D model files: h11d1-etched.step / h11d1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); h11d1.step / h11d1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Vishay Intertech datasheet (10 pp, sha256 febde76e66614e10, retrieved 2026-10-26, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF