component
HT8050ARTZ
Public Made by Adomby adom
HTCSEMI Bipolar (BJT), SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHT8050ARTZ
HTCSEMI · Bipolar (BJT) · SOT-23-3
HT8050ARTZ from HTCSEMI, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the NPN transistor; the datasheet gives no separate pin-level limit for this terminal, and the emitter-base rating is VEBO 5 V. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet gives no separate pin-level limit, and the device is rated for IC 1.5 A continuous with VCEO 25 V. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet rates VCBO at 40 V, IC at 1.5 A continuous, and PC at 0.3 W. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HTCSEMI |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 40 | V | IC= 100μA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 25 | V | IC= 0.1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=100μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 0.1 | μA | VCB=40V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | μA | VEB= 5V, IC=0 | 1 | ||
| DC current gain | hFE(1) | 120 | 400 | VCE=1V, IC= 100mA | 1 | ||
| DC current gain | hFE(2) | 40 | VCE=1V, IC= 800mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=800mA, IB= 80mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=800mA, IB= 80mA | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE=10V, IC= 50mA, f=30MHz | 1 | ||
| Collector-base voltage | VCBO | 40 | V | 1 | |||
| Collector-emitter voltage | VCEO | 25 | V | 1 | |||
| Emitter-base voltage | VEBO | 5 | V | 1 | |||
| Collector current, continuous | IC | 1.5 | A | 1 | |||
| Collector power dissipation | PC | 0.3 | W | 1 | |||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
HT8050ARTZ - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
ht8050artz-etched.step/ht8050artz-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ht8050artz.step/ht8050artz.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HTCSEMI datasheet (3 pp, sha256
970dc88bd1bfcbc7, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).