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IRFR2905ZPBF-HXY
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HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFR2905ZPBF-HXY
HXY MOSFET · MOSFETs · TO-252-2L
IRFR2905ZPBF-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin of the N-channel MOSFET; gate-source voltage is rated ±20 V, with threshold of 1.2 to 2.5 V and operation with gate drive as low as 4.5 V. |
| 2 | D | passive | Drain pin of the N-channel MOSFET (also the tab on TO-252); drain-source voltage is rated 60 V with continuous drain current of 50 A at TC=25℃. |
| 3 | S | passive | Source pin of the N-channel MOSFET; body diode continuous source current is 35 A with forward voltage of 1 V max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID@TC=25℃ | 50 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 25 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 90 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 39.2 | mJ | VDD=25V,VGS=10V,L=0.1mH,IAS=28A | 1 | ||
| Avalanche Current | IAS | 28 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 45 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 2.8 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 15 | mΩ | VGS=10V , ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 15 | 20 | mΩ | VGS=4.5V , ID=10A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VGS=VDS , ID =250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=48V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=48V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | 35 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 80 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V , IS=A , TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.057 | V/℃ | Reference to 25℃ , ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -5.68 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 45 | S | VDS=5V , ID=15A | 2 | ||
| Gate Resistance | Rg | 1.7 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 | ||
| Total Gate Charge (4.5V) | Qg | 19.3 | nC | VDS=48V , VGS=4.5V , ID=15A | 2 | ||
| Gate-Source Charge | Qgs | 7.1 | nC | VDS=48V , VGS=4.5V , ID=15A | 2 | ||
| Gate-Drain Charge | Qgd | 7.6 | nC | VDS=48V , VGS=4.5V , ID=15A | 2 | ||
| Turn-On Delay Time | Td(on) | 7.2 | ns | VDD=30V , VGS=10V , RG=3.3 , ID=15A | 2 | ||
| Rise Time | Tr | 50 | ns | VDD=30V , VGS=10V , RG=3.3 , ID=15A | 2 | ||
| Turn-Off Delay Time | Td(off) | 36.4 | ns | VDD=30V , VGS=10V , RG=3.3 , ID=15A | 2 | ||
| Fall Time | Tf | 7.6 | ns | VDD=30V , VGS=10V , RG=3.3 , ID=15A | 2 | ||
| Input Capacitance | Ciss | 2423 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 145 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 97 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 16.3 | nS | IF=15A , dI/dt=100A/µs , TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 11 | nC | IF=15A , dI/dt=100A/µs , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
IRFR2905ZPBF-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
irfr2905zpbf-hxy-etched.step/irfr2905zpbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr2905zpbf-hxy.step/irfr2905zpbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
f50fe542b7b607f2, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).