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Contents

README

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SVF4N65RDTR

Hangzhou Silan Microelectronics · MOSFETs · TO-252-2

SVF4N65RDTR from Hangzhou Silan Microelectronics, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; VGS maximum ±30 V, threshold VGS(th) 2.0 V min to 4.0 V max at ID=250µA.
2 D passive Drain (exposed tab on the TO-252-2L); VDS maximum 650 V, continuous ID 4.0 A at TC=25C, pulsed IDM 16 A.
3 S passive Source; continuous body-diode current IS 4.0 A, pulsed ISM 16 A.

Key specifications

Parameter Value
Manufacturer Hangzhou Silan Microelectronics
Package TO-252-2
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: SVF4N65RDTR
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: svf4n65rdtr-etched.step / svf4n65rdtr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); svf4n65rdtr.step / svf4n65rdtr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Hangzhou Silan Microelectronics datasheet (10 pp, sha256 e9b47a54362c4715, retrieved 2026-10-09, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF