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S9015W

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

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S9015W

MSKSEMI · Bipolar (BJT) · SOT-323

S9015W from MSKSEMI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the emitter-base breakdown voltage is -5 V (VEBO) and the base current is driven with a VBE of -0.6 to -0.75 V at VCE=-5 V, IC=-1 mA.
2 EMITTER passive Emitter terminal of the PNP transistor; the absolute maximum emitter-base voltage is -5 V (VEBO) and the collector current is rated to -100 mA.
3 COLLECTOR passive Collector terminal of the PNP transistor; the maximum ratings are -50 V collector-base (VCBO), -45 V collector-emitter (VCEO), and -100 mA collector current (IC), with 200 mW collector power dissipation.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -50 V IC=-100µA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -45 V IC=-100µA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100µA, IC=0 2
Collector cut-off current ICBO -100 nA VCB=-50V, IE=0 2
Emitter cut-off current IEBO -100 nA VEB=-5V, IC=0 2
DC current gain hFE 200 1000 VCE=-5V, IC=-1mA 2
Collector-emitter saturation voltage VCE(sat) -0.3 V IC=-100mA, IB=-10mA 2
Base-emitter saturation voltage VBE(sat) -1 V IC=-100mA, IB=-10mA 2
Base-emitter voltage VBE -0.6 -0.75 V VCE=-5V, IC=-1mA 2
Transition frequency fT 150 MHz VCE=-5V, IC=-10mA, f=30MHz 2
Collector output capacitance Cob 7 pF VCB=-10V, IE=0, f=1MHz 2
Collector-base voltage VCBO -50 V 2
Collector-emitter voltage VCEO -45 V 2
Emitter-base voltage VEBO -5 V 2
Collector current IC -100 mA 2
Collector power dissipation PC 200 mW 2
Operation junction and storage temperature range TJ,Tstg -55 150 ℃ 2
Thermal resistance, junction to ambient RθJA 625 ℃/W 2

CAD (KiCad official)

  • Symbol: S9015W
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: s9015w-etched.step / s9015w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s9015w.step / s9015w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (5 pp, sha256 28695c10ea4505d2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF