component
SWI7N60D
Public Made by Adomby adom
Samwin MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSWI7N60D
Samwin · MOSFETs · TO-251
SWI7N60D from Samwin, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, rated for a gate-to-source voltage of ±30 V. |
| 2 | Drain | passive | Drain terminal, rated for 600 V drain-to-source voltage and 7 A continuous drain current at TC=25oC. |
| 3 | Source | passive | Source terminal, with an integral reverse p-n junction body diode between drain and source rated 7 A continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-251 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 600 | V | 1 | |||
| Continuous Drain Current | ID | 7 | A | TC=25oC | 1 | ||
| Continuous Drain Current | ID | 4.2 | A | TC=100oC | 1 | ||
| Drain current pulsed | IDM | 28 | A | note 1 | 1 | ||
| Gate to Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single pulsed Avalanche Energy | EAS | 420 | mJ | note 2 | 1 | ||
| Repetitive Avalanche Energy | EAR | 49 | mJ | note 1 | 1 | ||
| Peak diode Recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 125 | W | TO-251, TC=25oC | 1 | ||
| Derating Factor above 25oC | 1 | W/oC | TO-251 | 1 | |||
| Operating Junction and Storage Temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Maximum Lead Temperature for soldering | TL | 300 | oC | 1/8 from case for 5 seconds | 1 | ||
| Thermal resistance, Junction to case | Rthjc | 1 | oC/W | TO-251 | 1 | ||
| Thermal resistance, Junction to ambient | Rthja | 80 | oC/W | TO-251 | 1 | ||
| Drain to source breakdown voltage | BVDSS | 600 | V | VGS=0V, ID=250uA | 2 | ||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.47 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=600V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=480V, TC=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 2.5 | 4.5 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 1.05 | 1.2 | Ω | VGS=10V, ID = 3.5A | 2 |
CAD (KiCad official)
- Symbol:
SWI7N60D - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
swi7n60d-etched.step/swi7n60d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swi7n60d.step/swi7n60d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (7 pp, sha256
df6fee106a5f27d1, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).