component
ASDM100N34KQ-R
Public Made by Adomby adom
ASDsemi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownASDM100N34KQ-R
ASDsemi · MOSFETs · TO-252
ASDM100N34KQ-R from ASDsemi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum gate-source voltage of ±20 V and threshold VGS(th) of 1.0 to 2.5 V at ID=250μA. |
| 2 | D | passive | Drain (also the exposed mounting tab); rated for VDSS 100 V and continuous ID of 34 A at TC=25℃. |
| 3 | S | passive | Source; carries the continuous current of 34 A at TC=25℃ and the body-diode forward current IS up to 30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 24 | 32 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 26 | 36 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 30 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 120 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=30A | 2 | ||
| Drain-Source Voltage | VDSS | 100 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 34 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | 20 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 120 | A | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 110 | mJ | 1 | |||
| Power Dissipation | PD | 63 | W | TC = 25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 2.5 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
ASDM100N34KQ-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
asdm100n34kq-r-etched.step/asdm100n34kq-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm100n34kq-r.step/asdm100n34kq-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ASDsemi datasheet (8 pp, sha256
594f2e68ef88fc4c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).