component
BSS205NH6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownBSS205NH6327
Infineon Technologies · MOSFETs · SOT-23
BSS205NH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel enhancement-mode MOSFET, logic level rated at 2.5 V with VGS maximum ±12 V. |
| 2 | S | passive | Source of the MOSFET, with the body diode running from source to drain (continuous diode current 0.5 A). |
| 3 | D | passive | Drain of the MOSFET, rated for VDS 20 V and continuous drain current 2.5 A at TA=25 °C (10 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V (BR)DSS | 20 | V | V GS= 0 , I D= 250 µA | 2 | ||
| Gate threshold voltage | V GS(th) | 0.7 | 0.95 | 1.2 | V | V DS=VGS , I D=11 µA | 2 |
| Drain-source leakage current | I DSS | 1 | μA | V DS=20 V, V GS=0 V, T j=25 °C | 2 | ||
| Drain-source leakage current | I DSS | 100 | μA | V DS=20 V, V GS=0 V, T j=150 °C | 2 | ||
| Gate-source leakage current | I GSS | 100 | nA | V GS=12 V, V DS=0 V | 2 | ||
| Drain-source on-state resistance | R DS(on) | 63 | 85 | mΩ | V GS=2.5 V, I D=1.95 A | 2 | |
| Drain-source on-state resistance | R DS(on) | 40 | 50 | mΩ | V GS=4.5 V, I D=2.5 A | 2 | |
| Input capacitance | C iss | 315 | 419 | pF | V GS=0 V, V DS=10 V, f =1 MHz | 3 | |
| Output capacitance | C oss | 114 | 152 | pF | V GS=0 V, V DS=10 V, f =1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 16 | 24 | pF | V GS=0 V, V DS=10 V, f =1 MHz | 3 | |
| Gate to source charge | Q gs | 0.65 | 0.9 | nC | V DD=10 V, I D=2.5 A, V GS=0 to 4.5 V | 3 | |
| Gate to drain charge | Q gd | 0.4 | 0.6 | nC | V DD=10 V, I D=2.5 A, V GS=0 to 4.5 V | 3 | |
| Gate charge total | Q g | 2.1 | 3.2 | nC | V DD=10 V, I D=2.5 A, V GS=0 to 4.5 V | 3 | |
| Diode continous forward current | I S | 0.5 | A | 3 | |||
| Diode pulse current | I S,pulse | 10 | A | 3 | |||
| Diode forward voltage | V SD | 0.8 | 1.1 | V | V GS=0 V, I F=2.5 A, T j=25 °C | 3 | |
| Continuous drain current | I D | 2.5 | A | T A=25 °C | 1 | ||
| Continuous drain current | I D | 2 | A | T A=70 °C | 1 | ||
| Pulsed drain current | I D,pulse | 10 | A | T A=25 °C | 1 | ||
| Avalanche energy, single pulse | E AS | 10.8 | mJ | I D=2.5 A, R GS=25 Ω | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | I D=2.5 A, V DS=16 V, di/dt =200 A/µs, T j,max=150 °C | 1 | ||
| Gate source voltage | V GS | -12 | 12 | V | 1 | ||
| Power dissipation | P tot | 0.5 | W | T A=25 °C | 1 | ||
| Operating and storage temperature | T j, T stg | -55 | 150 | °C | 1 | ||
| Soldering temperature | 260 | °C | 1 | ||||
| Thermal resistance, junction - ambient | R thJA | 250 | K/W | minimal footprint | 2 |
CAD (KiCad official)
- Symbol:
BSS205NH6327 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss205nh6327-etched.step/bss205nh6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss205nh6327.step/bss205nh6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
4f0853bf1cd82020, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).