component
BZM55C3V9-TR
Public Made by Adomby adom
Vishay Intertech Zener Diodes, SOD-80. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBZM55C3V9-TR
Vishay Intertech · Zener Diodes · SOD-80
BZM55C3V9-TR from Vishay Intertech, in a SOD-80. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the Zener diode, marked by the cathode identification band on the MicroMELF body; positive terminal in Zener (reverse) operation, with VZ of 3.7 V min to 4.1 V max at IZT1 = 5 mA for the BZM55C3V9. |
| 2 | A | passive | Anode of the Zener diode, the end opposite the cathode band; forward voltage is max 1.5 V at IF = 200 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOD-80 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zener voltage | VZ | 3.7 | 3.9 | 4.1 | V | at IZT1 = 5 mA, Tamb = 25 °C | 2 |
| Reverse leakage current | IR | 2 | μA | VR = 1 V, Tamb = 25 °C | 2 | ||
| Reverse leakage current | IR | 40 | μA | VR = 1 V, Tamb = 125 °C | 2 | ||
| Dynamic resistance | ZZ | 90 | Ω | at IZT1 = 5 mA, f = 1 kHz | 2 | ||
| Dynamic resistance (knee) | ZZK | 600 | Ω | at IZT2 = 1 mA, f = 1 kHz | 2 | ||
| Temperature coefficient of VZ | TKVZ | -0.08 | -0.05 | %/K | at IZT1 = 5 mA | 2 | |
| Power dissipation | Ptot | 500 | mW | RthJA ≤ 300 K/W, Tamb = 25 °C | 1 | ||
| Thermal resistance junction to ambient air | RthJA | 500 | K/W | Mounted on epoxy-glass hard tissue, fig. 1; 35 μm copper clad, 0.9 mm2 copper area per electrode | 1 | ||
| Thermal resistance junction to tie point | RthJL | 300 | K/W | 1 | |||
| Junction temperature | Tj | 175 | °C | 1 | |||
| Storage temperature range | Tstg | -65 | 175 | °C | 1 | ||
| Forward voltage | VF | 1.5 | V | IF = 200 mA | 1 | ||
| Test current 1 | IZT1 | 5 | mA | Tamb = 25 °C | 2 | ||
| Test current 2 | IZT2 | 1 | mA | Tamb = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
BZM55C3V9-TR - Footprint:
Diode_SMD:D_MiniMELF - 3D model: SOD-80 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (7 pp, sha256
2cc753251a5d3b40, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).