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SM9435PSKC-TRG-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownSM9435PSKC-TRG-VB
VBsemi Elec · MOSFETs · SO-8
SM9435PSKC-TRG-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET. Pins 1, 2, and 3 are internally connected sources; tie all together on the PCB to lower Rs and improve thermal performance. Continuous source current (diode conduction) IS = -2.3 A. |
| 2 | S | passive | Source terminal of the P-channel MOSFET (internally common with pins 1 and 3). Tie all source pins together on the PCB. |
| 3 | S | passive | Source terminal of the P-channel MOSFET (internally common with pins 1 and 2). Tie all source pins together on the PCB. |
| 4 | G | input | Gate terminal of the P-channel MOSFET. Absolute maximum VGS = ±20 V; typical gate threshold VGS(th) = -0.7 V to -2.0 V (ID = -250 µA). Typical gate charge Qg = 16 nC at VGS = -10 V; gate resistance Rg ≈ 8.8 Ω. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET. Pins 5, 6, 7, and 8 are internally connected drains; tie all together on the PCB for maximum current-handling and thermal dissipation to the drain pad. VDS max = -30 V; pulsed drain current IDM = -30 A. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET (internally common with pins 5, 7, and 8). Tie all drain pins together on the PCB. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET (internally common with pins 5, 6, and 8). Tie all drain pins together on the PCB. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET (internally common with pins 5, 6, and 7). Tie all drain pins together on the PCB. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Ordering variants
Same part, different packaging or reel option.
SM9435PSKC-TRG-VB
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, TA = 25 °C | ID | -5.8 | A | t ≤ 10 s | 1 | ||
| Continuous Drain Current, TA = 25 °C | ID | -4.1 | A | Steady State | 1 | ||
| Continuous Drain Current, TA = 70 °C | ID | -4.6 | A | t ≤ 10 s | 1 | ||
| Continuous Drain Current, TA = 70 °C | ID | -3.2 | A | Steady State | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | -2.3 | A | t ≤ 10 s | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -1.1 | A | Steady State | 1 | ||
| Maximum Power Dissipation, TA = 25 °C | PD | 2.5 | W | t ≤ 10 s | 1 | ||
| Maximum Power Dissipation, TA = 25 °C | PD | 1.3 | W | Steady State | 1 | ||
| Maximum Power Dissipation, TA = 70 °C | PD | 1.6 | W | t ≤ 10 s | 1 | ||
| Maximum Power Dissipation, TA = 70 °C | PD | 0.8 | W | Steady State | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (surface mounted) | RthJA | 40 | 50 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient (surface mounted) | RthJA | 70 | 95 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 24 | 30 | °C/W | Steady State | 1 | |
| Gate Threshold Voltage | VGS(th) | -0.7 | -2 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS = -30 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-State Drain Current | ID(on) | -20 | A | VDS ≤ -10 V, VGS = -10 V | 2 | ||
| On-State Drain Current | ID(on) | -5 | A | VDS ≤ -5 V, VGS = -4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.033 | Ω | VGS = -10 V, ID = -5.8 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.043 | Ω | VGS = -6 V, ID = -5 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.056 | Ω | VGS = -4.5 V, ID = -4.4 A | 2 | ||
| Diode Forward Voltage | VSD | -0.8 | -1.1 | V | IS = -2.3 A, VGS = 0 V | 2 | |
| Turn-On Delay Time | td(on) | 14 | 25 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Rise Time | tr | 14 | 25 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 42 | 70 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Fall Time | tf | 30 | 50 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Source-Drain Reverse Recovery Time | trr | 30 | 60 | ns | IF = -1.2 A, dI/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
SM9435PSKC-TRG-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
sm9435pskc-trg-vb-etched.step/sm9435pskc-trg-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sm9435pskc-trg-vb.step/sm9435pskc-trg-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (None pp, sha256
6c0d1c5d36b012c1, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).